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參數(shù)資料
| 型號： | STGD7NB60St4 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 7A - 600V DPAK Power MESH IGBT |
| 中文描述： | N溝道第7A - 600V的IGBT的DPAK封裝電力網(wǎng)格 |
| 文件頁數(shù)： | 8/8頁 |
| 文件大?。?/td> | 289K |
| 代理商： | STGD7NB60ST4 |
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granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
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STGD7NB60S
8/8
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STGF20NB60S | N-CHANNEL 13A - 600V TO-220FP PowerMESH IGBT |
| STGP12NB60K | SHORT CIRCUIT PROOF PowerMESH IGBT |
| STGP7NB60HDFP | N-Channel 7A-600V- TO-220/FP PowerMESH IGBT(N溝道絕緣柵雙極晶體管) |
| STGW40NC60V | N-CHANNEL 50A - 600V TO-247 Hyper Fast PowerMESH⑩ IGBT |
| STGY40NC60V | Niobium Oxide Capacitor; Capacitor Type:Solid; Voltage Rating:6.3VDC; Capacitor Dielectric Material:Niobium Oxide; Capacitance:220uF; Capacitance Tolerance:+/- 20%; ESR:0.4ohm; Operating Temp. Max:105 C; Operating Temp. Min:-55 C RoHS Compliant: Yes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STGD7NC60H | 制造商:STMicroelectronics 功能描述:Transistor IGBT N-Ch 600V 25A DPAK |
| STGD7NC60HT4 | 功能描述:IGBT 晶體管 N-Ch 600 Volt 14 Amp RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| STGD8NC60K | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 600V - 8A - D2PAK / DPAK / TO-220 Short circuit rated PowerMESH IGBT |
| STGD8NC60KD | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:600 V - 8 A - short circuit rugged IGBT |
| STGD8NC60KDT4 | 功能描述:IGBT 晶體管 N Ch 55V 6.5mohm 80A Pwr MOSFET RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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