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參數(shù)資料
| 型號： | STGD7NB120S-1 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 7A - 1200V IPAK Power MESH IGBT |
| 中文描述： | N溝道第7A - 1200伏像是iPak IGBT的電力網(wǎng)格 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 43K |
| 代理商： | STGD7NB120S-1 |
THERMAL DATA
R
thj-case
R
thj-amb
R
thc-sink
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Max
Max
Typ
2.27
100
1.5
o
C/W
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS
(T
j
= 25
o
C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
BR(CES)
Collector-Emitter
Breakdown Voltage
Emitter-Collector
Breakdown Voltage
Collector cut-off
(V
GE
= 0)
Gate-Emitter Leakage
Current (V
CE
= 0)
I
C
= 250
μ
A
V
GE
= 0
1200
V
V
BR(ECR)
IC = 10 mA
V
GE
= 0
20
V
I
CES
V
CE
= Max Rating
V
CE
= 0.8 Max Rating
V
GE
=
±
20 V
T
j
=
T
j
= 125
o
C
V
CE
= 0
25
o
C
250
1000
±
100
μ
A
μ
A
nA
I
GES
ON (
)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GE(th)
Gate Threshold
Voltage
Gate Emitter Voltage
V
CE
= V
GE
I
C
= 250
μ
A
3
5
V
V
GE
V
CE
= 2.5V
V
GE
= 15 V
V
GE
= 15 V
V
GE
= 15 V
I
C
= 2A T
j
=25
÷
125
o
C
I
C
= 3.5 A
I
C
= 7 A
I
C
= 10 A
6.5
V
V
CE(SAT)
Collector-Emitter
Saturation Voltage
1.7
1.6
2.1
V
V
V
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Gate Charge
V
CE
=25 V
I
C
= 7 A
2.5
4.5
S
C
ies
C
oes
C
res
V
CE
= 25 V
f = 1 MHz
V
GE
= 0
430
40
7
pF
pF
pF
Q
G
V
CE
= 960 V
I
C
= 7 A
V
GE
= 15 V
R
G
=1k
29
nC
I
CL
Latching Current
V
clamp
= 960 V
T
j
= 150
o
C
10
A
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
(di/dt)
on
Delay Time
Rise Time
V
CC
= 960 V
V
GE
= 15 V
V
CC
= 960 V
R
G
= 1 K
T
j
= 125
o
C
I
C
= 7 A
R
G
= 1 K
I
C
= 7 A
V
GE
= 15 V
570
270
ns
ns
E
on
Turn-on Current Slope
Turn-on
Switching Losses
800
3.2
A/
μ
s
mJ
STGD7NB120S-1
2/6
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| STGD7NB120S-1_0008 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 7A - 1200V - IPAK PowerMESH IGBT |
| STGD7NB120ST4 | 功能描述:IGBT 晶體管 N-Channel 7A-1200V IPAK PowerMESH IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| STGD7NB60F | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 7A - 600V - T0-220 / DPAK PowerMESH IGBT |
| STGD7NB60FT4 | 功能描述:IGBT 晶體管 N-Ch 600 Volt 7 Amp RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| STGD7NB60H | 功能描述:IGBT 晶體管 N-Ch 600 Volt 7 Amp RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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