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參數(shù)資料
| 型號(hào)： | STGD5NB120SZ-1 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 40 Characters x 1 Lines, 5x7 Dot Matrix Character and Cursor |
| 中文描述： | 40 個(gè)字符 x 1 線、 5 x 7 點(diǎn)陣字符和光標(biāo) |
| 文件頁數(shù)： | 13/13頁 |
| 文件大?。?/td> | 350K |
| 代理商： | STGD5NB120SZ-1 |
13/13
STGD5NB120SZ-1 - STGD5NB120SZ
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by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
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相關(guān)代理商/技術(shù)參數(shù) |
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| STGD5NB120SZT4 | 功能描述:IGBT 晶體管 N-Ch 1200 Volt 5 Amp RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| STGD6M65DF2 | 功能描述:IGBT Trench Field Stop 650V 12A 88W Surface Mount DPAK 制造商:stmicroelectronics 系列:M 包裝:剪切帶（CT） 零件狀態(tài):在售 IGBT 類型:溝槽型場截止 電壓 - 集射極擊穿（最大值）:650V 電流 - 集電極（Ic）（最大值）:12A 脈沖電流 - 集電極 (Icm):24A 不同?Vge，Ic 時(shí)的?Vce（on）:2V @ 15V，6A 功率 - 最大值:88W 開關(guān)能量:36μJ（開），200μJ（關(guān)） 輸入類型:標(biāo)準(zhǔn) 柵極電荷:21.2nC 25°C 時(shí) Td（開/關(guān)）值:15ns/90ns 測試條件:400V，6A，22 歐姆，15V 反向恢復(fù)時(shí)間（trr）:140ns 工作溫度:-55°C ~ 175°C（TJ） 安裝類型:表面貼裝 封裝/外殼:TO-252-3，DPak（2 引線+接片），SC-63 供應(yīng)商器件封裝:DPAK 標(biāo)準(zhǔn)包裝:1 |
| STGD6NC60H | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 600V - 7A - DPAK Very fast PowerMESH TM IGBT |
| STGD6NC60H_07 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 600V - 7A - DPAK Very fast PowerMESH TM IGBT |
| STGD6NC60H-1 | 功能描述:IGBT N-CH 600V 7A IPAK 制造商:stmicroelectronics 系列:PowerMESH?? 包裝:管件 零件狀態(tài):有效 IGBT 類型:- 電壓 - 集射極擊穿（最大值）:600V 電流 - 集電極（Ic）（最大值）:15A 脈沖電流 - 集電極 (Icm):21A 不同?Vge，Ic 時(shí)的?Vce（on）:2.5V @ 15V，3A 功率 - 最大值:62.5W 開關(guān)能量:20μJ（開），68μJ（關(guān)） 輸入類型:標(biāo)準(zhǔn) 柵極電荷:13.6nC 25°C 時(shí) Td（開/關(guān)）值:12ns/76ns 測試條件:390V，3A，10 歐姆，15V 反向恢復(fù)時(shí)間（trr）:- 封裝/外殼:TO-251-3 短引線，IPak，TO-251AA 安裝類型:通孔 供應(yīng)商器件封裝:IPAK（TO-251） 標(biāo)準(zhǔn)包裝:75 |
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