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參數(shù)資料
| 型號： | STE45NK80ZD |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 800V - 0.11ohm - 45 A ISOTOP Super FREDMesh MOSFET |
| 中文描述： | N溝道800V的- 0.11Ω的- 45甲1000V的集電極MOSFET的超F(xiàn)REDMesh |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 287K |
| 代理商： | STE45NK80ZD |
3/10
STE45NK80ZD
ELECTRICAL CHARACTERISTICS
(T
CASE
=25°C UNLESS OTHERWISE SPECIFIED)
Table 7: On/Off
Symbol
Parameter
V
(BR)DSS
Drain-source
Breakdown Voltage
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating, T
C
= 125 °C
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 150μA
R
DS(on)
Static Drain-source On
Resistance
Table 8: Dynamic
Symbol
g
fs
(1)
C
iss
C
oss
C
rss
Table 9: Source Drain Diode
Symbol
I
SD
I
SDM
(2)
Source-drain Current (pulsed)
V
SD
(1)
Forward On Voltage
t
rr
Q
rr
I
RRM
Reverse Recovery Current
t
rr
Q
rr
I
RRM
Reverse Recovery Current
(1) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
(2) Pulse width limited by safe operating area.
(3) C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80% V
DSS
.
Test Conditions
I
D
= 1 mA, V
GS
= 0
Min.
800
Typ.
Max.
Unit
V
V
DS
= Max Rating
10
100
μA
μA
V
GS
= ± 20V
±10
μA
2.5
3.75
4.5
V
V
GS
= 10V, I
D
= 22.5 A
0.11
0.13
Parameter
Test Conditions
V
DS
= 15V
,
I
D
= 22.5 A
V
DS
= 25V, f = 1 MHz, V
GS
= 0
Min.
Typ.
35
Max.
Unit
S
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Equivalent Output
Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
26000
1620
260
pF
pF
pF
C
oss eq.
(3)
V
GS
= 0V, V
DS
= 0V to 720V
700
pF
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
V
DD
= 400 V, I
D
= 20 A
R
G
= 4.7
,V
GS
= 10 V
(see Figure 17)
105
128
350
174
ns
ns
ns
ns
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 400 V, I
D
= 40 A,
V
GS
= 10V
558
121
307
781
nC
nC
nC
Parameter
Test Conditions
Min.
Typ.
Max.
45
180
Unit
A
A
Source-drain Current
I
SD
= 45 A, V
GS
= 0
I
SD
= 40 A, di/dt = 100A/μs
V
DD
= 50 V, T
j
= 25°C
(see Figure 18)
1.6
V
Reverse Recovery Time
Reverse Recovery Charge
375
4.65
24.8
ns
μC
A
Reverse Recovery Time
Reverse Recovery Charge
I
SD
= 40 A, di/dt = 100A/μs
V
DD
= 50 V, T
j
= 150°C
(see Figure 18)
568
9.66
34
ns
μC
A
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