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參數(shù)資料
| 型號(hào)： | STE45NK80ZD |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 800V - 0.11ohm - 45 A ISOTOP Super FREDMesh MOSFET |
| 中文描述： | N溝道800V的- 0.11Ω的- 45甲1000V的集電極MOSFET的超F(xiàn)REDMesh |
| 文件頁(yè)數(shù)： | 2/10頁(yè) |
| 文件大小： | 287K |
| 代理商： | STE45NK80ZD |
STE45NK80ZD
2/10
Table 3: Absolute Maximum ratings
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
Drain Current (continuous) at T
C
= 25°C (Steady State)
Drain Current (continuous) at T
C
= 100°C
I
DM
(*)
Drain Current (pulsed)
P
TOT
Total Dissipation at T
C
= 25°C (Steady State)
P
TOT
Derating Factor
V
ESD(G-S)
Gate source ESD(HBM-C=100pF, R=1.5k
)
dv/dt (1)
Peak Diode Recovery voltage slope
V
ISO
Insulation Withstand Voltage (AC-RMS) from All Four
Terminals to External Heatsink
T
j
Tstg
Storage Temperature
(*)
Pulse width limited by safe operating area
(1) I
SD
≤
45A, di/dt
≤
500 A/μs, V
DD
≤
V
(BR)DSS.
Table 4: Thermal Data
Rthj-case
Rthj-amb
Table 5: Avalanche Characteristics
Symbol
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 35 V)
Table 6: Gate-Source Zener Diode
Symbol
BV
GSO
Gate-Source Bre
a
kdown
Voltage
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
Parameter
Value
Unit
800
V
800
V
± 30
V
45
28
A
A
180
A
600
W
5
W/°C
7
KV
8
V/ns
V
2500
Operating Junction Temperature
- 65 to 150
°C
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
0.2
40
°C/W
°C/W
Parameter
Max. Value
45
Unit
A
1.2
J
Parameter
Test Conditions
Igs=± 1mA (Open Drain)
Min.
30
Typ.
Max.
Unit
V
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