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參數資料
| 型號： | STE250N06 |
| 廠商： | 意法半導體 |
| 英文描述： | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE |
| 中文描述： | ? -通道增強型功率MOS器件中的ISOTOP封裝 |
| 文件頁數： | 3/8頁 |
| 文件大?。?/td> | 297K |
| 代理商： | STE250N06 |
3/8
STE250NS10
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)
Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
(
)
Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
V
DD
= 50 V
R
G
= 4.7
(Resistive Load, Figure 3)
I
D
= 125 A
V
GS
= 10 V
110
380
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 50V I
D
= 220A V
GS
= 10V
900
160
330
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(off)
t
f
Turn-off Delay Time
Fall Time
V
DD
= 50 V
R
G
= 4.7
,
(Resistive Load, Figure 3)
I
D
= 125 A
V
GS
= 10 V
1100
330
ns
ns
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
V
clamp
= 80 V
R
G
= 4.7
,
(Inductive Load, Figure 5)
I
D
= 220 A
V
GS
= 10 V
950
330
600
ns
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current (pulsed)
220
880
A
A
V
SD
(*)
Forward On Voltage
I
SD
= 220 A
V
GS
= 0
1.5
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 220 A
V
DD
= 30 V
(see test circuit, Figure 5)
di/dt = 100A/μs
T
j
= 150°C
200
1.35
13.5
ns
μ
C
A
ELECTRICAL CHARACTERISTICS
(continued)
Safe Operating Area
Thermal Impedance
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相關代理商/技術參數 |
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|---|---|
| STE250NS10 | 功能描述:MOSFET N-Ch 100 Volt 220 A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STE250NS10 | 制造商:STMicroelectronics 功能描述:MOSFET |
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| STE250S | 制造商:Thomas & Betts 功能描述:STAR TECK EXTREME 2 1/2 STEEL |
| STE26N50 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE |
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