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參數(shù)資料
| 型號： | STE180NE10 |
| 廠商： | 意法半導體 |
| 英文描述： | N-CHANNEL 100V - 4.5 mohm - 180A ISOTOP STripFET] POWER MOSFET |
| 中文描述： | N溝道100V的- 4.5毫歐- 180A 1000V的集電極STripFET]功率MOSFET |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 85K |
| 代理商： | STE180NE10 |
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
V
DD
= 50 V
R
G
= 4.7
(Resistive Load, see fig. 3)
V
DD
= 80 V I
D
= 180 A V
GS
= 10 V
I
D
= 90 A
V
GS
= 10 V
65
230
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
485
90
210
680
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-off Delay Time
Fall Time
V
DD
= 50 V
R
G
= 4.7
(Resistive Load, see fig. 3)
V
DD
= 80 V
R
G
= 4.7
(Inductive Load, see fig. 5)
I
D
= 90 A
V
GS
= 10 V
280
100
ns
ns
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
I
D
= 180 A
V
GS
= 10 V
100
170
260
ns
ns
ns
SOURCE DRAINDIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
180
540
A
A
V
SD
(
)
t
rr
I
SD
= 180 A
I
SD
= 180 A
V
DD
= 50 V
(see test circuit, fig. 5)
V
GS
= 0
1.5
V
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
di/dt = 100 A/
μ
s
T
j
= 150
o
C
250
1875
15
ns
μ
C
A
(
) Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5 %
(
) Pulse width limited by safe operating area
SafeOperating Area
Thermal Impedance
STE180N10
3/8
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