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參數(shù)資料
| 型號： | STE180NE10 |
| 廠商： | 意法半導體 |
| 英文描述： | N-CHANNEL 100V - 4.5 mohm - 180A ISOTOP STripFET] POWER MOSFET |
| 中文描述： | N溝道100V的- 4.5毫歐- 180A 1000V的集電極STripFET]功率MOSFET |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 85K |
| 代理商： | STE180NE10 |
THERMAL DATA
R
thj-case
R
thc-h
Thermal Resistance Junction-case
Thermal Resistance Case-heatsink With conductive
Grease Applied
Max
Max
0.27
0.05
o
C/W
o
C/W
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
Single Pulse Avalanche Energy
(starting T
j
= 25
o
C, I
D
= I
AR
, V
DD
= 25 V)
60
A
E
AS
720
mJ
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwisespecified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
= 0)
Gate-body Leakage
Current (V
DS
= 0)
I
D
= 1 mA
V
GS
= 0
100
V
I
DSS
V
DS
= Max Rating
V
DS
= Max Rating
V
GS
=
±
20 V
T
c
= 125
o
C
50
500
μ
A
μ
A
nA
I
GSS
±
400
ON (
)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage V
DS
= V
GS
Static Drain-source On
Resistance
On State Drain Current
I
D
= 250
μ
A
I
D
= 90 A
2
3
4
V
V
GS
= 10 V
5.5
7
m
I
D(on)
V
DS
> I
D(on)
x R
DS(on)max
V
GS
= 10 V
180
A
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(
)
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
> I
D(on)
x R
DS(on)max
I
D
= 90 A
70
S
C
iss
C
oss
C
rss
V
DS
= 25 V
f = 1 MHz
V
GS
= 0
18
4
0.5
nF
nF
nF
STE180N10
2/8
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相關代理商/技術參數(shù) |
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|---|---|
| STE180NE10 | 制造商:STMicroelectronics 功能描述:MOSFET N SOT-227B |
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