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參數(shù)資料
| 型號： | STD3N30L |
| 廠商： | 意法半導體 |
| 英文描述： | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
| 中文描述： | ? -通道增強型功率MOS器件 |
| 文件頁數(shù)： | 10/10頁 |
| 文件大?。?/td> | 170K |
| 代理商： | STD3N30L |
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patentor patentrights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication aresubject to change withoutnotice. Thispublication supersedes and replacesall information previously supplied.
SGS-THOMSONMicroelectronics products are notauthorized for use ascriticalcomponents in lifesupport devices or systems withoutexpress
writtenapproval ofSGS-THOMSONMicroelectonics.
1996 SGS-THOMSONMicroelectronics -Printedin Italy- All Rights Reserved
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STD3N30L
10/10
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STD3N30 | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
| STD3NB50-1 | ***** BITTE 4969170 VERWENDEN***** |
| STD3NB50 | N - CHANNEL 500V - 2.5ohm - 3A - IPAK/DPAK PowerMESH MOSFET |
| STD3NC50 | N - CHANNEL 500V - 2.4ohm - 3A TO-251/TO-252 PowerMESHII MOSFET |
| STD3NK80ZT4 | N-CHANNEL 800V - 3.8 OHM - 2.5A TO-220/FP/DPAK/IPAK ZENER-PROTECTED SUPERMESH POWER MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STD3N30L-1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
| STD3N30LT4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 300V V(BR)DSS | 3A I(D) | TO-252 |
| STD3N30T4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 300V V(BR)DSS | 3A I(D) | TO-252 |
| STD3N40K3 | 功能描述:MOSFET N-Ch 400V 2.7 Ohm 2A SuperMESH3 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD3N62K3 | 功能描述:MOSFET N-channel 620V, 2.7A SuperMESH Mosfet RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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