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參數(shù)資料
| 型號(hào)： | STD2NC70Z |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 700V - 4.1ohm - 2.3A DPAK/IPAK Zener-Protected PowerMESH⑩III MOSFET |
| 中文描述： | N溝道高達(dá)700V - 4.1ohm - 2.3a作出的DPAK /像是iPak齊保護(hù)的PowerMESH⑩三MOSFET的 |
| 文件頁(yè)數(shù)： | 3/10頁(yè) |
| 文件大?。?/td> | 447K |
| 代理商： | STD2NC70Z |
3/10
STD2NC70Z/STD2NC70Z-1
ELECTRICAL CHARACTERISTICS
(CONTINUED)
SWITCHING ON
Symbol
Parameter
t
d(on)
Turn-on Delay Time
SWITCHING OFF
Symbol
t
r(Voff)
t
f
t
c
SOURCE DRAIN DIODE
Symbol
I
SD
I
SDM
(2)
V
SD
(1)
t
rr
Q
rr
I
RRM
GATE-SOURCE ZENER DIODE
Symbol
BV
GSO
Gate-Source Breakdown
Voltage
α
T
Voltage Thermal Coefficient
Note: 1.
Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3.
V
BV
=
α
T (25°-T) BV
GSO
(25°)
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally
be applied from gate to souce. In this respect the 25V Zener voltage is appropiate to achieve an efficient
and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid
the usage of external components.
Test Conditions
V
DD
= 350 V, I
D
= 1.25 A
R
G
= 4.7
V
GS
= 10V
(see test circuit, Figure 3)
V
DD
= 560V, I
D
= 2.5A,
V
GS
= 10V
Min.
Typ.
Max.
Unit
14
ns
t
r
Rise Time
11
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
17
24
nC
Gate-Source Charge
4
nC
Gate-Drain Charge
7
nC
Parameter
Test Conditions
V
DD
= 560V, I
D
= 2.5 A,
R
G
= 4.7
,
V
GS
= 10V
(see test circuit, Figure 5)
Min.
Typ.
Max.
Unit
Off-voltage Rise Time
16
ns
Fall Time
33
ns
Cross-over Time
40
ns
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Source-drain Current
2.3
A
Source-drain Current (pulsed)
9.2
A
Forward On Voltage
I
SD
= 2.3 A, V
GS
= 0
I
SD
= 2.5 A, di/dt = 100A/μs,
V
DD
= 27V, T
j
= 150°C
(see test circuit, Figure 5)
1.6
V
Reverse Recovery Time
175
ns
Reverse Recovery Charge
0.6
μC
Reverse Recovery Current
7.5
A
Parameter
Test Conditions
Igs=± 1mA (Open Drain)
Min.
25
Typ.
Max.
Unit
V
T=25°C Note(3)
1.3
10
-4
/°C
Rz
Dynamic Resistance
I
D
= 50 mA, V
GS
= 0
90
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| STD2NK60Z-1 | 功能描述:MOSFET N-Ch, 600V-7.2ohms 1.4A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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