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參數(shù)資料
| 型號： | STD2NC70Z |
| 廠商： | 意法半導體 |
| 英文描述： | N-CHANNEL 700V - 4.1ohm - 2.3A DPAK/IPAK Zener-Protected PowerMESH⑩III MOSFET |
| 中文描述： | N溝道高達700V - 4.1ohm - 2.3a作出的DPAK /像是iPak齊保護的PowerMESH⑩三MOSFET的 |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 447K |
| 代理商： | STD2NC70Z |
STD2NC70Z/STD2NC70Z-1
2/10
THERMAL DATA
Rthj-case
Rthj-amb
Rthc-sink
T
l
AVALANCHE CHARACTERISTICS
Symbol
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
ELECTRICAL CHARACTERISTICS
(TCASE
= 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
V
(BR)DSS
Drain-source
Breakdown Voltage
BV
DSS
/
T
J
Breakdown Voltage Temp.
Coefficient
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating, T
C
= 125 °C
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
ON
(1)
Symbol
V
GS(th)
R
DS(on)
DYNAMIC
Symbol
g
fs
(1)
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
2.27
62.5
0.1
°C/W
°C/W
°C/W
Maximum Lead Temperature For Soldering Purpose
300
°C
Parameter
Max Value
2.3
Unit
A
165
mJ
Test Conditions
I
D
= 250 μA, V
GS
= 0
Min.
700
Typ.
Max.
Unit
V
I
D
= 1 mA, V
GS
= 0
0.8
V/°C
V
DS
= Max Rating
1
μA
50
μA
V
GS
= ±20V
±10
μA
Parameter
Test Conditions
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 10V, I
D
= 1.25 A
Min.
Typ.
Max.
Unit
Gate Threshold Voltage
3
4
5
V
Static Drain-source On
Resistance
4.1
4.7
I
D(on)
On State Drain Current
V
DS
> I
D(on)
x R
DS(on)max,
V
GS
= 10V
2.3
A
Parameter
Test Conditions
V
DS
> I
D(on)
x R
DS(on)max,
I
D
= 1.25A
V
DS
= 25V, f = 1 MHz, V
GS
= 0
Min.
Typ.
2
Max.
Unit
S
Forward Transconductance
C
iss
C
oss
Input Capacitance
530
pF
Output Capacitance
50
pF
C
rss
Reverse Transfer
Capacitance
7
pF
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| STD2NC70Z-1 | N-CHANNEL 700V - 4.1ohm - 2.3A DPAK/IPAK Zener-Protected PowerMESH⑩III MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STD2NC70Z-1 | 制造商:STMicroelectronics 功能描述: |
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| STD2NK100Z | 功能描述:MOSFET N-Channel 1000V Zener SuperMESH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD2NK60Z | 功能描述:MOSFET N Ch 600V 7.2Ohm 1.4A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD2NK60Z-1 | 功能描述:MOSFET N-Ch, 600V-7.2ohms 1.4A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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