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參數(shù)資料
| 型號(hào)： | STD1NB50 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-Channel 500V-7.5Ω-1.4A- IPAK PowerMESHTM MOSFET(N溝道MOSFET) |
| 中文描述： | N溝道500V -7.5Ω- 1.4A的，像是iPak PowerMESHTM MOSFET的（不適用溝道MOSFET的） |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 94K |
| 代理商： | STD1NB50 |
THERMAL DATA
R
thj-case
Rthj-amb
R
thc-sink
T
l
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Maximum Lead Temperature For Soldering Purpose
Max
Max
Typ
2.78
100
1.5
275
o
C/W
oC/W
C/W
o
C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max,
δ
< 1%)
Single Pulse Avalanche Energy
(starting T
j
= 25
C, I
D
= I
AR
, V
DD
= 50 V)
1.4
A
E
AS
40
mJ
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unlessotherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250
μ
A
V
GS
= 0
500
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating
T
c
= 125
o
C
1
50
μ
A
μ
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
=
±
30 V
±
100
nA
ON (
)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold
Voltage
Static Drain-source On
Resistance
On State Drain Current
V
DS
= V
GS
I
D
= 250
μ
A
2
3
4
V
R
DS(on)
V
GS
= 10V
I
D
=0.7 A
7.5
9
I
D(on)
V
DS
> I
D(on)
x R
DS(on)max
V
GS
= 10 V
1.4
A
DYNAMIC
Symbol
g
fs
(
)
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
> I
D(on)
x R
DS(on)max
I
D
= 0.7 A
0.45
0.7
S
C
iss
C
oss
C
rss
V
DS
= 25 V
f = 1 MHz
V
GS
= 0
150
24
2.5
200
32
3.3
pF
pF
pF
STD1NB50
2/8
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| STD1NB50-1 | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:TRANSISTOR MOSFET D-PAK |
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| STD1NB60-1 | 功能描述:MOSFET N-CH 600V 1A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD1NB60T4 | 功能描述:MOSFET N-CH 600V 1A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD1NB80 | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:N - CHANNEL 800V - 16ohm - 1A - DPAK/IPAK PowerMESH MOSFET |
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