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參數(shù)資料
| 型號： | STD19NE06L1 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 19A I(D) | TO-251AA |
| 中文描述： | 晶體管| MOSFET的| N溝道| 60V的五（巴西）直| 19A條（?。﹟對251AA |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 92K |
| 代理商： | STD19NE06L1 |
1/9
March 2002
.
STD19NE06
N-CHANNEL 60V - 0.042
- 19A IPAK/DPAK
STripFET
POWER MOSFET
I
TYPICAL R
DS
(on) = 0.042
I
AVALANCHE RUGGED TECHNOLOGY
I
100% AVALANCHE TESTED
I
175
o
C OPERATING TEMPERATURE
I
THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX “-1”)
I
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4”)
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique ”Single Feature Size
” strip-
based process. The resulting transistor shows extremely
high packing density for low on-resistance, rugged
avalanche characteristics and less critical alignment
steps
therefore
a
remarkable
reproducibility.
manufacturing
APPLICATIONS
I
DC MOTOR CONTROL
I
DC-DC & DC-AC CONVERTERS
I
SYNCHRONOUS RECTIFICATION
TYPE
V
DSS
R
DS(on)
I
D
STD19NE06
60 V
<0.050
19 A
3
2
1
1
3
IPAK
TO-251
(Suffix “-1”)
DPAK
TO-252
(Suffix “T4”)
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
Drain Current (continuous) at T
C
= 25
°
C
I
D
Drain Current (continuous) at T
C
= 100
°
C
I
DM
(
)
Drain Current (pulsed)
P
tot
Total Dissipation at T
C
= 25
°
C
Derating Factor
E
AS(1)
Single Pulse Avalanche Energy
T
stg
Storage Temperature
T
j
Max. Operating Junction Temperature
(
)
Pulse width limitedby safe operating area
(1) Starting T
j
= 25
o
C, I
D
= 30A, V
DD
= 30 V
Parameter
Value
60
60
±
20
19
13.5
76
70
0.46
1.45
Unit
V
V
V
A
A
A
W
W/
°
C
mJ
-55 to 175
°
C
INTERNAL SCHEMATIC DIAGRAM
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STD19NE06L-1 | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 19A I(D) | TO-251AA |
| STD19NE06LT4 | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 19A I(D) | TO-252AA |
| STD19NE06T4 | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 19A I(D) | TO-252AA |
| STD19NE06 | N-CHANNEL 60V - 0.042 W - 19A IPAK/DPAK STripFET POWER MOSFET |
| STD1NA60-1 | TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 1.6A I(D) | TO-251 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STD19NE06L-1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 19A I(D) | TO-251AA |
| STD19NE06LT4 | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD19NE06T4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 19A I(D) | TO-252AA |
| STD1HN60K3 | 制造商:STMicroelectronics 功能描述:POWER MOSFET - Tape and Reel 制造商:STMicroelectronics 功能描述:MOSFET N-CH 600V 1.2A DPAK 制造商:STMicroelectronics 功能描述:N-ch,600V,6.4Ohm,1.2 A,DPAK 制造商:STMicroelectronics 功能描述:N-Ch 600V 6.4Ohm 1.2A SuperMESH3 FET |
| STD1HNC60 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 600V - 4ohm - 2A - IPAK/DPAK PowerMesh⑩II MOSFET |
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