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參數(shù)資料
| 型號： | STB70NF03L-1 |
| 廠商： | 意法半導體 |
| 英文描述： | BOX MOUNTING RECEPTACLE |
| 中文描述： | N溝道30V的- 0.008ohm - 70A條TO-220/I2PAK低柵極電荷STripFET⑩功率MOSFET |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 255K |
| 代理商： | STB70NF03L-1 |
1/9
March 2001
STP70NF03L
STB70NF03L-1
N-CHANNEL 30V - 0.008
- 70A TO-220/I
2
PAK
LOW GATE CHARGE STripFET POWER MOSFET
(1) I
SD
≤
70A, di/dt
≤
290A/μs, V
DD
=24 V ; T
j
≤
T
JMAX.
I
TYPICAL R
DS
(on) = 0.008
I
TYPICAL Q
g
= 35 nC @ 10 V
I
OPTIMAL R
DS
(on) x Q
g
TRADE-OFF
I
CONDUCTION LOSSES REDUCED
I
SWITCHING LOSSES REDUCED
DESCRIPTION
This application specific Power Mosfet is the third
generation of STMicroelectronics unique “Single
Feature Size
”
strip-based process. The result-
ing transistor shows the best trade-off between on-
resistance and gate charge. When used as high
and low side in buck regulators, it gives the best
performance in terms of both conduction and
switching losses. This is extremely important for
motherboards where fast switching and high effi-
ciency are of paramount importance.
APPLICATIONS
I
SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY CPU CORE DC/DC
CONVERTERS
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
Drain Current (continuos) at T
C
= 25°C
I
D
Drain Current (continuos) at T
C
= 100°C
I
DM
(
G
)
Drain Current (pulsed)
P
TOT
Total Dissipation at T
C
= 25°C
Derating Factor
dv/dt (1)
Peak Diode Recovery voltage slope
T
stg
Storage Temperature
T
j
Max. Operating Junction Temperature
(
G
) Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STP70NF03L
STB70NF03L-1
30 V
30 V
< 0.01
< 0.01
70 A
70 A
Parameter
Value
Unit
30
V
30
V
± 15
V
70
A
50
A
280
A
100
W
0.67
4
W/°C
V/ns
–65 to 175
°C
175
°C
TO-220
1
2
3
123
I
2
PAK
INTERNAL SCHEMATIC DIAGRAM
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PDF描述 |
|---|---|
| STP80N05-09 | N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR |
| STP80NF03L-04-1 | Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PC00; Number of Contacts:4; Connector Shell Size:8; Connecting Termination:Solder; Circular Shell Style:Wall Mount Receptacle |
| STP80NS04Z | N-Channel Clamped 7.5mΩ-80A- TO-220 Fully Protected MESH OVERLAYTM MOSFET(N溝道MOSFET) |
| STP8NK85Z | N-CHANNEL 850V -1.1ohm - 6.7A TO-220/TO-220FP Zener-Protected SuperMESH MOSFET |
| STP90NF03L | N-CHANNEL 30V - 0.0056ohm - 90A TO-220/I2PAK LOW GATE CHARGE STripFET⑩ POWER MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| STB70NF03LT4 | 功能描述:MOSFET N-Ch 30 Volt 70 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STB70NF3 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 30V - 0.008 ohm - 70A D2PAK LOW GATE CHARGE STripFET POWER MOSFET |
| STB70NF3LL | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 30V - 0.008 ohm - 70A D2PAK LOW GATE CHARGE STripFET POWER MOSFET |
| STB70NF3LL_06 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 30V - 0.0075ohm - 70A - D2PAK Low gate charge STripFET TM II Power MOSFET |
| STB70NF3LLT4 | 功能描述:MOSFET N-Ch 30 Volt 70 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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