- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄380777 > STP80NS04Z (意法半導(dǎo)體) N-Channel Clamped 7.5mΩ-80A- TO-220 Fully Protected MESH OVERLAYTM MOSFET(N溝道MOSFET) PDF資料下載
參數(shù)資料
| 型號(hào)： | STP80NS04Z |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-Channel Clamped 7.5mΩ-80A- TO-220 Fully Protected MESH OVERLAYTM MOSFET(N溝道MOSFET) |
| 中文描述： | N通道鉗位7.5mΩ- 80A條至220充分保護(hù)網(wǎng)眼OVERLAYTM MOSFET的（不適用溝道MOSFET的） |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 283K |
| 代理商： | STP80NS04Z |
STP80NS04Z
N - CHANNEL CLAMPED 7.5m
- 80A - TO-220
FULLY PROTECTED MESH OVERLAY
MOSFET
I
TYPICAL R
DS(on)
= 0.0075
I
100% AVALANCHE TESTED
I
LOW CAPACITANCE AND GATE CHARGE
I
175
o
C MAXIMUM JUNCTION
TEMPERATURE
DESCRIPTION
This fully clamped Mosfet is produced by using
the latest advanced Company’s Mesh Overlay
process which is based on a novel strip layout.
The inherent benefits of the new technology
coupled with the extra clamping capabilities make
this product particularly suitable for the harshest
operation conditions such as those encountered
in the automotive environment. Any other
application requiring extra ruggedness is also
recommended.
APPLICATIONS
I
ABS, SOLENOID DRIVERS
I
MOTOR CONTROL
I
DC-DC CONVERTERS
INTERNAL SCHEMATIC DIAGRAM
July 1998
1
2
3
TO-220
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DG
V
GS
I
D
I
D
I
DG
I
GS
I
DM
(
)
P
tot
Parameter
Value
CLAMPED
CLAMPED
CLAMPED
80
60
±
50
±
50
320
160
1.06
2
4
4
-65 to 175
-40 to 175
Unit
V
V
V
A
A
mA
mA
A
W
W/
o
C
kV
kV
kV
o
C
o
C
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
Drain Gate Current (continuous)
Gate Source Current (continuous)
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
V
ESD
(G-S)
Gate-Source ESD (HBM - C= 100pF, R=1.5 k
)
V
ESD
(G-D)
Gate-Drain ESD (HBM - C= 100pF, R=1.5 k
)
V
ESD
(D-S)
Drain-Source ESD (HBM - C= 100pF, R=1.5 k
)
T
stg
Storage Temperature
T
j
Max. Operating Junction Temperature
TYPE
V
DSS
R
DS(on)
<0.008
I
D
STP80NS04Z
CLAMPED
80 A
1/8
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STP8NK85Z | N-CHANNEL 850V -1.1ohm - 6.7A TO-220/TO-220FP Zener-Protected SuperMESH MOSFET |
| STP90NF03L | N-CHANNEL 30V - 0.0056ohm - 90A TO-220/I2PAK LOW GATE CHARGE STripFET⑩ POWER MOSFET |
| STB90NF03L-1 | BOX MOUNTING RECEPTACLE |
| STP9NA50 | N-Channel Enhancement Mode Fast Power MOS Transistor(N溝道增強(qiáng)模式快速功率MOSFET) |
| STP9NA50FI | N-Channel Enhancement Mode Fast Power MOS Transistor(N溝道增強(qiáng)模式快速功率MOSFET) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STP80NS04ZB | 制造商:STMicroelectronics 功能描述: |
| STP80PF55 | 功能描述:MOSFET P-Ch 55 Volt 80 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP8-1030 | 制造商:Carlo Gavazzi 功能描述: |
| STP8444 | 制造商:SAMHOP 制造商全稱:SAMHOP 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| STP85N15F4 | 制造商:STMicroelectronics 功能描述: |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。