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參數(shù)資料
| 型號： | STB6NC80ZT4 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 1812L260-C / PTC 8V POLYFUSE SURF MOUNT 1812 2.60A / T&R |
| 中文描述： | N溝道800V的1.5OHM 5.4A TO-220/TO-220FP/D2PAK/I2PAK /穩(wěn)壓保護(hù)POWERMESH三MOSFET的 |
| 文件頁數(shù)： | 1/13頁 |
| 文件大?。?/td> | 511K |
| 代理商： | STB6NC80ZT4 |
1/13
December 2002
STP6NC80Z - STP6NC80ZFP
STB6NC80Z - STB6NC80Z-1
N-CHANNEL 800V - 1.5
- 5.4A TO-220/FP/D2PAK/I2PAK
Zener-Protected PowerMESHIII MOSFET
I
TYPICAL R
DS
(on) = 1.5
I
EXTREMELY HIGH dv/dt AND CAPABILITY
GATE-TO- SOURCE ZENER DIODES
I
100% AVALANCHE TESTED
I
VERY LOW GATE INPUT RESISTANCE
I
GATE CHARGE MINIMIZED
DESCRIPTION
The third generation of MESH OVERLAY Power
MOSFETs for very high voltage exhibits unsurpassed
on-resistance per unit area while integrating back-to-
back Zener diodes between gate and source. Such ar-
rangement gives extra ESD capability with higher rug-
gedness performance as requested by a large variety
of single-switch applications.
APPLICATIONS
I
SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION
I
WELDING EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
()Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STP6NC80Z/FP
800V
< 1.8
5.4 A
STB6NC80Z/-1
800V
< 1.8
5.4 A
Parameter
Value
Unit
STP(B)6NC80Z(-1)
STP6NC80ZFP
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(1)
P
TOT
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k
)
800
V
800
V
Gate- source Voltage
± 25
V
Drain Current (continuous) at T
C
= 25°C
Drain Current (continuous) at T
C
= 100°C
5.4
5.4(*)
A
3.4
3.4(*)
A
Drain Current (pulsed)
21
21(*)
A
Total Dissipation at T
C
= 25°C
Derating Factor
125
40
W
1
0.32
W/°C
I
GS
Gate-source Current (
G
)
Gate source ESD(HBM-C=100pF, R=15K
)
Peak Diode Recovery voltage slope
±50
mA
V
ESD(G-S)
dv/dt
V
ISO
T
stg
T
j
3
KV
3
V/ns
Insulation Winthstand Voltage (DC)
--
2000
V
Storage Temperature
–65 to 150
°C
Max. Operating Junction Temperature
150
°C
(1)I
SD
≤
5.4A, di/dt
≤
100A/μs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
.
(*)Pulse width Limited by maximum temperature allowed
TO-220
1
2
3
TO-220FP
123
I2PAK
(Tabless TO-220)
1
3
D2PAK
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STB6NC80 | N-CHANNEL 800V - 1.5ohm - 5.4A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESH⑩III MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STB6NC90Z | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 900V - 1.55ohm - 5.4A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESH⑩III MOSFET |
| STB6NC90Z-1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 900V - 1.55ohm - 5.4A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESH⑩III MOSFET |
| STB6NC90ZT4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 5.4A I(D) | TO-252AA |
| STB6NK60Z | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 600V - 1ohm - 6A TO-220/TO-220FP/D2PAK/I2PAK Zener-Protected SuperMESH⑩Power MOSFET |
| STB6NK60Z_0711 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 600 V - 1 ヘ - 6 A - TO-220/TO-220FP/D2PAK/I2PAK Zener-Protected SuperMESH⑩ Power MOSFET |
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