參數(shù)資料
型號(hào)： STB12NK80Z
廠商： 意法半導(dǎo)體
英文描述： N-CHANNEL 800V - 0.65 OHM - 10.5A TO-220 / D2PAK / TO-247 Zener-Protected SuperMESH Power MOSFET
中文描述： N溝道800V的- 0.65歐姆- 10.5A至220 / D2PAK封裝/至247齊納保護(hù)SuperMESH功率MOSFET
文件頁(yè)數(shù)： 4/15頁(yè)
文件大?。?/td> 342K
代理商： STB12NK80Z
2 Electrical characteristics
STB12NK80Z - STP12NK80Z - STW12NK80Z
4/15
Table 7.
Source drain diode
Table 8.
Gate-source zener diode
(1) I
SD
≤
10.5 A, di/dt
≤
200A/μs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
(2) Pulse width limited by safe operating area
(3) Limited only by maximum temperature allowed
(4) Pulsed: pulse duration = 300μs, duty cycle 1.5%
(5) C
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0
to 80%V
DSS
(6)The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device
’
s ESD capability, but
also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this
respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device
’
s
integrity. These integrated Zener diodes thus avoid the usage of external components.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
Note
2
Source-drain Current
Source-drain Current (pulsed)
10.5
42
A
A
V
SD
Note
4
Forward on Voltage
I
SD
=10.5 A, V
GS
=0
1.6
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
=10.5A, di/dt = 100A/μs,
V
DD
=100 V, Tj=150
°
C
635
5.9
18.5
ns
μC
A
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
BV
GSO
Note
6
Gate-Source
Breakdown Voltage
Igs=±1mA
(Open Drain)
30
V
相關(guān)PDF資料
PDF描述
STB12NK80ZT4 N-CHANNEL 800V - 0.65 OHM - 10.5A TO-220 / D2PAK / TO-247 Zener-Protected SuperMESH Power MOSFET
STB13007DT4 High voltage fast-switching NPN power transistor
STB16NK65Z-S N-CHANNEL 650V-0.38OHM-13A TO-220 I2SPAK Zener - Protected SuperMESH MOSFET
STP16NK65Z N-CHANNEL 650V-0.38OHM-13A TO-220 I2SPAK Zener - Protected SuperMESH MOSFET
STB19NB20 N-Channel Enhancement Mode PowerMESHTM MOSFET(N溝道增強(qiáng)模式MOSFET)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STB12NK80Z_07 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 800V - 0.65ヘ - 10.5A - TO-220 - D2PAK - TO-247 Zener - Protected SuperMESH⑩ Power MOSFET
STB12NK80Z-S 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 800V - 0.65ohm - 10.5A I2SPAK Zener-Protected SuperMESH Power MOSFET
STB12NK80ZT4 功能描述:MOSFET N-Ch 800 Volt 10.5A Zener SuperMESH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STB12NM50 制造商:STMicroelectronics 功能描述:
STB12NM50-1 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 500V - 0.3W - 12A TO-220/TO-220FP/I PAK MDmesh]Power MOSFET
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*