參數(shù)資料
型號(hào): STB12NK80Z
廠商: 意法半導(dǎo)體
英文描述: N-CHANNEL 800V - 0.65 OHM - 10.5A TO-220 / D2PAK / TO-247 Zener-Protected SuperMESH Power MOSFET
中文描述: N溝道800V的- 0.65歐姆- 10.5A至220 / D2PAK封裝/至247齊納保護(hù)SuperMESH功率MOSFET
文件頁(yè)數(shù): 2/15頁(yè)
文件大?。?/td> 342K
代理商: STB12NK80Z
1 Electrical ratings
STB12NK80Z - STP12NK80Z - STW12NK80Z
2/15
1
Electrical ratings
Table 1.
Absolute maximum ratings
Table 2.
Thermal data
Table 3.
Avalanche characteristics
Symbol
Parameter
Value
Unit
V
DS
Drain-Source Voltage (V
GS
= 0)
800
V
V
DGR
Drain-gate Voltage (R
GS
= 20k
)
800
V
V
GS
Gate-Source Voltage
± 30
V
I
D
Drain Current (continuous) at T
C
= 25
°
C
10.5
A
I
D
Drain Current (continuous) at T
C
= 100
°
C
6.6
A
I
DM
Note
2
Drain Current (pulsed)
42
A
P
TOT
Total Dissipation at T
C
= 25
°
C
190
W
Derating Factor
1.51
W/
°
C
Vesd(G-S)
G-S ESD (HBM C=100pF, R=1.5k
)
6000
V
dv/dt
Note
1
Peak Diode Recovery voltage slope
4.5
V/ns
T
j
T
stg
Operating Junction Temperature
Storage Temperature
-55 to 150
°
C
TO-220/D2PAK
TO-247
Unit
Rthj-case
Thermal Resistance Junction-case Max
0.66
°
C/W
Rthj-amb
Thermal Resistance Junction-amb Max
62.5
50
°
C/W
T
l
Maximum Lead Temperature For Soldering
Purpose
300
°
C
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, repetitive or
Not-Repetitive (pulse width limited by Tj max)
10.5
A
E
AS
Single Pulse Avalanche Energy
(starting Tj=25
°
C, I
D
=I
AR
, V
DD
= 50V)
400
mJ
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