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參數(shù)資料
| 型號： | STB12NK80Z |
| 廠商： | 意法半導體 |
| 英文描述： | N-CHANNEL 800V - 0.65 OHM - 10.5A TO-220 / D2PAK / TO-247 Zener-Protected SuperMESH Power MOSFET |
| 中文描述： | N溝道800V的- 0.65歐姆- 10.5A至220 / D2PAK封裝/至247齊納保護SuperMESH功率MOSFET |
| 文件頁數(shù)： | 3/15頁 |
| 文件大?。?/td> | 342K |
| 代理商： | STB12NK80Z |
STB12NK80Z - STP12NK80Z - STW12NK80Z
2 Electrical characteristics
3/15
2
Electrical characteristics
(T
CASE
= 25
°
C unless otherwise specified)
Table 4.
On/off states
Table 5.
Dynamic
Table 6.
Switching times
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-Source Breakdown
Voltage
I
D
= 1mA, V
GS
= 0
800
V
I
DSS
Zero Gate Voltage Drain
Current (V
GS
= 0)
V
DS
= Max Rating,
V
DS
= Max Rating,Tc = 125
°
C
1
50
μA
μA
I
GSS
Gate Body Leakage Current
(V
DS
= 0)
V
GS
= ±20V
±
10
μA
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 100 μA
3
3.75
4.5
V
R
DS(on)
Static Drain-Source On
Resistance
V
GS
= 10 V, I
D
= 4.5 A
0.65
0.75
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
Note
4
Forward Transconductance
V
DS
=15V, I
D
= 5.25A
12
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
=25V, f=1 MHz, V
GS
=0
2620
250
53
pF
pF
pF
C
oss eq.
Note
5
Equivalent Ouput Capacitance V
GS
=0, V
DS
=0V to 640V
100
pF
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
=640V, I
D
= 10.5 A
V
GS
=10V
(see Figure 17)
87
14
44
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
V
DD
=400 V, I
D
=5.25 A,
R
G
=4.7
,
V
GS
=10V
(see Figure 18)
30
18
ns
ns
t
d(off)
t
f
Turn-off Delay Time
Fall Time
V
DD
=400 V, I
D
=5.25A,
R
G
=4.7
,
V
GS
=10V
(see Figure 18)
70
20
ns
ns
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
V
DD
=640 V, I
D
=10.5A,
R
G
=4.7
,
V
GS
=10V
(see Figure 18)
16
15
28
ns
ns
ns
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| STB12NK80Z_07 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 800V - 0.65ヘ - 10.5A - TO-220 - D2PAK - TO-247 Zener - Protected SuperMESH⑩ Power MOSFET |
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