參數(shù)資料
型號(hào)： ST7FL09Y0MBE
廠商： STMICROELECTRONICS
元件分類： 微控制器/微處理器
英文描述： 8-BIT, FLASH, 16 MHz, MICROCONTROLLER, PDSO16
封裝： 0.150 INCH, ROHS COMPLIANT, PLASTIC, SOP-16
文件頁(yè)數(shù)： 85/104頁(yè)
文件大?。?/td> 2151K
代理商： ST7FL09Y0MBE
Obsolete
Product(s)
- Obsolete
Product(s)
ST7L05, ST7L09
81/104
13.6 MEMORY CHARACTERISTICS
TA = -40 to +105°C, unless otherwise specified
13.6.1 RAM and Hardware Registers
13.6.2 Flash Program Memory
13.6.3 EEPROM Data Memory
Notes:
1. Minimum VDD supply voltage without losing data stored in RAM (in HALT mode or under RESET) or in hardware reg-
isters (only in HALT mode). Guaranteed by construction, not tested in production.
2. Up to 32 bytes can be programmed at a time.
3. The data retention time increases when the TA decreases.
4. Data based on reliability test results and monitored in production.
5. Guaranteed by Design. Not tested in production.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VRM
Data retention mode1)
HALT mode (or RESET)
1.6
V
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDD
Operating voltage for Flash write/erase
Refer to operating range of
VDD with TA, Table 13.3.1,
3.0
5.5
V
tPROG
Programming time for 1~32 bytes2)
TA =40 to +105°C
5
10
ms
Programming time for 1.5 Kbytes
TA = 25°C
0.24
0.48
s
tRET
Data retention4)
TA = 55°C
3)
20
years
NRW
Write erase cycles
TA = 25°C
1K
cycles
TA = 105°C
300
IDD
Supply current
Read / Write / Erase modes
fCPU = 8 MHz, VDD =5.5V
2.65
mA
No Read/No Write Mode
100
A
Power down mode / HALT
0
0.1
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDD
Operating voltage for EEPROM write/
erase
Refer to operating range of
VDD with TA, Table 13.3.1,
3.0
5.5
V
tPROG
Programming time for 1~32 bytes
TA =40 to +105°C
5
10
ms
tRET
4)
Data retention with 1K cycling (TPROG
=40 to +105°C)
TA = 55°C
3)
20
years
Data retention with 10K cycling (TPROG
=40 to +105°C)
10
Data retention with 100K cycling
(TPROG =40 to +105°C)
1
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