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| 型號： | SST55VD020-60-I-TQWE |
| 元件分類： | 存儲控制器/管理單元 |
| 英文描述： | IDE COMPATIBLE, FLASH MEMORY DRIVE CONTROLLER, PQFP100 |
| 封裝： | 14 X 14 MM, ROHS COMPLIANT, MS-026, TQFP-100 |
| 文件頁數(shù)： | 28/45頁 |
| 文件大?。?/td> | 666K |
| 代理商： | SST55VD020-60-I-TQWE |
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34
Data Sheet
NAND Controller
SST55VD020
2009 Silicon Storage Technology, Inc.
S71355-03-000
07/09
ELECTRICAL SPECIFICATIONS
Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute Maximum
Stress Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation
of the device at these conditions or conditions greater than those defined in the operational sections of this data
sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.)
Temperature Under Bias . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55°C to +125°C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C
D.C. Voltage on Pins1 I3, I4, O4, and O5 to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to VDD+0.5V
1. Please refer to Table 1 for pin assignment information.
Transient Voltage (<20 ns) on Pins1 I3, I4, O4, and O5 to Ground Potential . . . . . . . . . . . . . . . . . -2.0V to VDD+2.0V
D.C. Voltage on Pins1 I1, I2, O1, O2, and O6 to Ground Potential. . . . . . . . . . . . . . . . . . . . . . . . -0.5V to VDDQ+0.5V
Transient Voltage (<20 ns) on Pins1 I1, I2, O1, O2, and O6 to Ground Potential. . . . . . . . . . . . . -2.0V to VDDQ+2.0V
Package Power Dissipation Capability (TA = 25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W
Through Hole Lead Soldering Temperature (10 Seconds). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300°C
Surface Mount Solder Reflow Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C for 10 seconds
Output Short Circuit Current2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
2. Outputs shorted for no more than one second. No more than one output shorted at a time.
TABLE 12: Absolute Maximum Power Pin Stress Ratings
Parameter
Symbol
Conditions
Input Power
VDDQ
VDD
-0.3V min to 6.5V max
-0.3V min to 4.0V max
Voltage on any flash media interface pin with respect to VSS
-0.5V min to VDD + 0.5V max
Voltage on all other pins with respect to VSS
-0.5V min to VDDQ + 0.5V max
T0-0.0 1355
Operating Range
Range
Ambient Temperature
VDDQ
VDD
5V
3V
3.3V
MinMax
Commercial
0°C to +70°C
2.7V
3.465V
3.135V
3.465V
4.5V
5.5V
Industrial
-40°C to +85°C
2.7V
3.465V
3.135V
3.465V
4.5V
5.5V
AC Conditions of Test
Input Rise/Fall Time . . . . . . . . . . . . . . 10 ns
Output Load Media. . . . . . . . . . . . . . . . CL = 100 pF for 3.3V / 80 pF for 3V
Output Load Host . . . . . . . . . . . . . . . . . CL = 100 pF for 3.3V and 5.0V / 80 pF for 3V
See Figure 5
Note: All AC specifications are guaranteed by design.
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相關(guān)代理商/技術(shù)參數(shù) |
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| SST55VD020-60-I-TQWE-TM024 | 功能描述:閃存 ATA Media 60MHz 3.3V Industrial RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| SST58LD008 | 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:ATA-Disk Chip |
| SST58LD008-70-C-P1H | 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:ATA-Disk Chip |
| SST58LD016 | 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:ATA-Disk Chip |
| SST58LD016-70-C-P1H | 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:ATA-Disk Chip |
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