參數(shù)資料
型號： SSM6K32TU
廠商： Toshiba Corporation
英文描述： Relay drive, DC/DC converter application
中文描述： 繼電器驅(qū)動器，直流/直流轉(zhuǎn)換器應(yīng)用
文件頁數(shù)： 1/6頁
文件大?。?/td> 618K
代理商： SSM6K32TU
SSM6K32TU
2007-11-01
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM6K32TU
○
Relay drive, DC/DC converter application
z
4Vdrive
z
Low on resistance:
R
on
= 440m
(max) (@V
GS
= 4 V)
R
on
= 300m
(max) (@V
GS
= 10 V)
Absolute Maximum Ratings
(Ta = 25
℃
)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
V
DS
V
GSS
I
D
I
DP
P
D
(Note 1)
T
ch
T
stg
60
V
Gate-Source voltage
±
20
V
DC
2
Drain current
Pulse
6
A
Drain power dissipation
500
mW
Channel temperature
150
°
C
°
C
Storage temperature range
55~150
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Note 1: Mounted on FR4 board.
(25.4 mm
×
25.4 mm
×
1.6 t, Cu Pad: 645 mm
2
)
Electrical Characteristics (Ta = 25
℃)
Unit: mm
1,2,5,6 : Drain
3 : Gate
4 : Source
JEDEC
JEITA
TOSHIBA
2-2T1D
Weight: 7.0 mg (typ.)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GSS
I
DSS
V
GS
= ±16V, V
DS
= 0V
V
DS
= 60V, V
GS
= 0V
I
D
= 10mA, V
GS
= 0V
V
DS
= 10V, l
D
= 1mA
V
GS
= 4V, I
D
= 1A
V
GS
= 10V, I
D
= 1A
V
DS
= 10V, I
D
= 1A
―
―
±10
μ
A
Drain cut-off current
―
―
100
μ
A
Drain-Source breakdown voltage
V
(BR) DSS
V
th
60
―
―
V
Gate threshold voltage
0.8
―
2.0
V
―
0.33
0.44
Drain-Source ON resistance
R
DS (ON)
―
0.23
0.30
Ω
Forward transfer admittance
|Y
fs
|
C
iss
C
rss
C
oss
t
r
t
on
t
f
t
off
Q
g
1.0
2.0
―
S
Input capacitance
―
140
―
Reverse transfer capacitance
―
20
―
Output capacitance
V
DS
= 10V, V
GS
= 0V
f = 1MHz
―
65
―
pF
Rise time
―
140
―
Turn-on time
―
210
―
Fall time
―
470
―
Switching time
Turn-off time
V
DD
≒
30 V, I
D
=
1 A
V
GS
=
0~10 V, R
G
=
50
Ω
―
1600
―
ns
Total gate charge
Gate
source charge
Gate
drain charge
―
5.0
―
Q
gs
―
3.6
―
Q
gd
V
DD
≒
48V, V
GS
= 10V
I
D
= 2A
―
1.4
―
nC
Drain-Source forward voltage
V
DSF
I
D
= -2A, V
GS
= 0V
―
―
1.5
V
相關(guān)PDF資料
PDF描述
SSM6K34TU High Current Switching Applications
SSM6K403TU Power Management Switch Applications
SSM6K404TU High-Speed Switching Applications
SSM6K405TU High-Speed Switching Applications
SSM6L05FU TOSHIBA Field Effect Transistor Silicon N/P Channel MOS Type
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SSM6K32TU(TE85L,F) 功能描述:MOSFET Vds=60V Id=2A 6Pin RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SSM6K34TU 功能描述:MOSFET INCORRECT MOUSER P/N 6Pin RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SSM6K34TU(TE85L,F) 功能描述:MOSFET Vds=30V Id=3A 6Pin RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SSM6K403TU 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Power Management Switch Applications
SSM6K404TU 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:High-Speed Switching Applications
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