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參數(shù)資料
| 型號： | SSM6K34TU |
| 廠商： | Toshiba Corporation |
| 英文描述： | High Current Switching Applications |
| 中文描述： | 高電流開關應用 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 201K |
| 代理商： | SSM6K34TU |
SSM6K34TU
2007-11-01
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM6K34TU
High Current Switching Applications
Power Management Switch Applications
4.5Vdrive
Low on resistance:
:R
on
= 77 m
(max) (@V
GS
= 4.5 V)
:R
on
= 50 m
(max) (@V
GS
= 10 V)
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
V
DS
V
GSS
I
D
I
DP
P
D
(Note 1)
T
ch
T
stg
30
V
Gate-Source voltage
±
20
V
DC
3
Drain current
Pulse
6
A
Drain power dissipation
500
mW
Channel temperature
150
°
C
°
C
Storage temperature range
55~150
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Note 1: Mounted on FR4 board.
(25.4 mm
×
25.4 mm
×
1.6 t, Cu Pad: 645 mm
2
)
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
V
(BR) DSS
V
(BR) DSX
I
DSS
I
GSS
V
th
Y
fs
I
D
=
10 mA, V
GS
=
0
I
D
=
10 mA, V
GS
=
20 V
V
DS
=
30 V, V
GS
=
0
V
GS
=
±
16 V, V
DS
=
0
V
DS
=
10 V, I
D
=
1 mA
V
DS
=
10 V, I
D
=
2 A
I
D
=
2 A, V
GS
=
4.5 V
I
D
=
2 A, V
GS
=
10 V
30
Drain-Source breakdown voltage
15
V
Drain cut-off current
10
±
10
μ
A
μ
A
Gate leakage current
Gate threshold voltage
1.3
2.5
V
Forward transfer admittance
(Note2)
3.4
6.8
S
(Note2)
58
77
Drain-Source ON resistance
R
DS (ON)
(Note2)
38
50
m
Ω
Input capacitance
C
iss
C
rss
C
oss
Q
g
Q
gs
Q
gd
t
on
t
off
V
DSF
470
Reverse transfer capacitance
60
Output capacitance
V
DS
=
10 V, V
GS
=
0, f
=
1 MHz
80
pF
Total gate charge
―
10
―
Gate
source charge
―
7.6
―
Gate
drain charge
V
DS
= 24 V, I
DS
= 3.0 A
V
GS
= 10 V
―
2.4
―
nC
Turn-on time
8.3
Switching time
Turn-off time
V
DD
=
15 V, I
D
=
2 A,
V
GS
=
0~10 V, R
G
=
4.7
Ω
I
D
= -3A, V
GS
= 0V (Note2)
22
ns
Drain-Source forward voltage
―
0.8
1.2
V
Note2: Pulse test
Unit: mm
1,2,5,6 : Drain
3
4
: Gate
: Source
JEDEC
JEITA
TOSHIBA
2-2T1D
Weight: 7.0 mg (typ.)
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| SSM6K34TU(TE85L,F) | 功能描述:MOSFET Vds=30V Id=3A 6Pin RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SSM6K403TU | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Power Management Switch Applications |
| SSM6K404TU | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:High-Speed Switching Applications |
| SSM6K405TU | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:High-Speed Switching Applications |
| SSM6K407TU(TE85L,F | 制造商:Toshiba America Electronic Components 功能描述:MOSFET Nch 60V 2A 0.3ohm/10V UF6 |
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