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參數(shù)資料
| 型號(hào)： | SSM6K403TU |
| 廠商： | Toshiba Corporation |
| 英文描述： | Power Management Switch Applications |
| 中文描述： | 電源管理開關(guān)應(yīng)用 |
| 文件頁(yè)數(shù)： | 1/7頁(yè) |
| 文件大?。?/td> | 216K |
| 代理商： | SSM6K403TU |
SSM6K403TU
2007-11-01
1
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS MOS
SSM6K403TU
○
Power Management Switch Applications
○
High-Speed Switching Applications
1.5V drive
Low ON-resistance
:
R
on
= 66m
Ω
(max) (@V
GS
= 1.5V)
R
on
= 43m
Ω
(max) (@V
GS
= 1.8V)
R
on
= 32m
Ω
(max) (@V
GS
= 2.5V)
R
on
= 28m
Ω
(max) (@V
GS
= 4.0V)
Absolute Maximum Ratings
(Ta = 25
C) (Note)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
V
DSS
20
V
Gate-source voltage
V
GSS
±
10
V
DC
I
D
4.2
Drain current
Pulse
I
DP
8.4
A
Drain power dissipation
P
D
(Note1)
500
mW
Channel temperature
T
ch
150
°
C
Storage temperature
T
stg
55~150
°
C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on an FR4 board
(25.4 mm
×
25.4 mm
×
1.6 t, Cu Pad: 645 mm
2
)
UNIT: mm
0
6
1.7±0.1
2.1±0.1
1
1
2
0
0
3
2
5
4
0
+
0
JEDEC
―
JEITA
―
TOSHIBA
2-2T1D
weight: 7.0mg (typ.)
UF6
1,2,5,6 : Drain
3 : Gate
4 : source
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