參數(shù)資料
型號: SPP80N03S2L-031
廠商: SIEMENS AG
英文描述: OptiMOS Power-Transistor( MOS 型功率晶體管)
中文描述: 的OptiMOS功率晶體管(馬鞍山型功率晶體管)
文件頁數(shù): 6/8頁
文件大?。?/td> 93K
代理商: SPP80N03S2L-031
2000-04-20
Page 6
SPP80N03S2L-03
SPB80N03S2L-03
Preliminary data
Drain-source on-state resistance
R
DS(on)
=
f
(
T
j
)
parameter :
I
D
= 80 A,
V
GS
= 10 V
SPP80N03S2L-03
-60
-20
20
60
100
140
°C
T
j
200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
m
7.5
R
D
typ
98%
Gate threshold voltage
V
GS(th)
=
f
(
T
j)
parameter:
V
GS
=
V
DS
,
I
D
= 250 μA
-60
-20
20
60
100
°C
180
T
j
0.0
0.5
1.0
1.5
2.0
V
3.0
V
G
typ.
98%
2%
Typ. capacitances
C
=
f
(
V
DS
)
parameter:
V
GS
=0V,
f
=1 MHz
0
5
10
15
20
V
30
V
DS
2
10
3
10
4
10
5
10
pF
C
C
iss
C
oss
C
rss
Forward characteristics of reverse diode
I
F
=
f
(V
SD
)
parameter:
T
j , t
p
= 80 μs
3
10
0.0
0.4
0.8
1.2
1.6
2.0
2.4
V
3.0
V
SD
0
10
1
10
2
10
A
SPP80N03S2L-03
I
F
T
j
= 25 °C typ
T
j
= 175 °C typ
T
j
= 25 °C (98%)
T
j
= 175 °C (98%)
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