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參數(shù)資料
| 型號(hào)： | SPP20N60S5 |
| 廠商： | SIEMENS A G |
| 元件分類： | 功率晶體管 |
| 英文描述： | Cool MOS Power-Transistor(Cool MOS 功率晶體管) |
| 中文描述： | 20 A, 600 V, 0.19 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 3/10頁 |
| 文件大小： | 114K |
| 代理商： | SPP20N60S5 |
3
1999-11-02
SPP20N60S5
SPB20N60S5
Preliminary data
Electrical Characteristics
, at T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Values
typ.
Unit
min.
max.
Dynamic Characteristics
Transconductance
V
DS
≥
2*
I
D
*
R
DS(on)max
,
I
D
= 13 A
Turn-on delay time
V
DD
= 350 V,
V
GS
= 10 V,
I
D
= 20 A,
R
G
= 5.6
Rise time
V
DD
= 350 V,
V
GS
= 10 V,
I
D
= 20 A,
R
G
= 5.6
Turn-off delay time
V
DD
= 350 V,
V
GS
= 10 V,
I
D
= 20 A,
R
G
= 5.6
Fall time
V
DD
= 350 V,
V
GS
= 10 V,
I
D
= 20 A,
R
G
= 5.6
g
fs
-
12
-
S
t
d(on)
-
60
-
ns
t
r
-
70
-
t
d(off)
-
150
-
t
f
-
40
-
Gate Charge Characteristics
Gate to source charge
V
DD
= 350 V, I
D
= 20 A
Gate to drain charge
V
DD
= 350 V, I
D
= 20 A
Total gate charge
V
DD
= 350 V, I
D
= 20 A, V
GS
= 0 to 10 V
Q
gs
-
16
-
nC
Q
gd
-
44
-
Q
g
-
88
-
Reverse Diode
Inverse diode continuous forward current
T
C
= 25 °C
Inverse diode direct current,pulsed
T
C
= 25 °C
Inverse diode forward voltage
V
GS
= 0 V,
I
F
= 20 A
Reverse recovery time
V
R
= 100 V,
I
F
=
I
S
,
di
F
/dt
= 100 A/μs
Reverse recovery charge
V
R
= 100 V,
I
F=
l
S
,
di
F
/dt
= 100 A/μs
I
S
-
-
20
A
I
SM
-
-
40
V
SD
-
1
1.2
V
t
rr
-
610
-
ns
Q
rr
-
12
-
μC
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| SPP20N60S5 | 制造商:Infineon Technologies AG 功能描述:MOSFET N TO-220 |
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| SPP20N60S5_09 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Cool MOS? Power Transistor |
| SPP20N60S5BKSA1 | 制造商:Infineon Technologies AG 功能描述:COOL MOS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:MOSFET N-CH 650V 20A TO-220AB |
| SPP20N60S5HKSA1 | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 600V 20A 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-220 制造商:Infineon Technologies AG 功能描述:COOL MOS - Rail/Tube |
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