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參數(shù)資料
| 型號(hào)： | SPP20N60S5 |
| 廠商： | SIEMENS A G |
| 元件分類： | 功率晶體管 |
| 英文描述： | Cool MOS Power-Transistor(Cool MOS 功率晶體管) |
| 中文描述： | 20 A, 600 V, 0.19 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 114K |
| 代理商： | SPP20N60S5 |
2
1999-11-02
SPP20N60S5
SPB20N60S5
Preliminary data
Electrical Characteristics
, at T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Values
typ.
Unit
min.
max.
Thermal Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient
(Leaded and through-hole packages)
R
thJC
R
thJA
-
-
-
-
0.6
62
K/W
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
2)
R
thJA
-
-
-
35
62
-
Static Characteristics
, at T
j
= 25 °C, unless otherwise specified
Drain- source breakdown voltage
V
GS
= 0 V,
I
D
= 0.25 mA
Gate threshold voltage,
V
GS
=
V
DS
I
D
= 1 mA,
T
j
= 25 °C
Zero gate voltage drain current,
V
DS
=
V
DSS
V
GS
= 0 V,
T
j
= 25 °C
V
GS
= 0 V,
T
j
= 150 °C
Gate-source leakage current
V
GS
= 20 V,
V
DS
= 0 V
Drain-Source on-state resistance
V
GS
= 10 V,
I
D
= 13 A
V
(BR)DSS
600
-
-
V
V
GS(th)
3.5
4.5
5.5
I
DSS
-
-
0.5
-
25
250
μA
I
GSS
-
-
100
nA
R
DS(on)
-
0.16
0.19
1current limited by Tjmax
2
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70μm thick) copper area for drain
connection. PCB is vertical without blown air.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SPP20N60S5 | 制造商:Infineon Technologies AG 功能描述:MOSFET N TO-220 |
| SPP20N60S5_01 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Cool MOS⑩ Power Transistor |
| SPP20N60S5_09 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Cool MOS? Power Transistor |
| SPP20N60S5BKSA1 | 制造商:Infineon Technologies AG 功能描述:COOL MOS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:MOSFET N-CH 650V 20A TO-220AB |
| SPP20N60S5HKSA1 | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 600V 20A 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-220 制造商:Infineon Technologies AG 功能描述:COOL MOS - Rail/Tube |
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