- 您現在的位置：買賣IC網 > PDF目錄385857 > SPN01N60S5 (SIEMENS AG) Cool MOS Small-Signal-Transistor(Cool MOS 小信號晶體管) PDF資料下載
參數資料
| 型號： | SPN01N60S5 |
| 廠商： | SIEMENS AG |
| 英文描述： | Cool MOS Small-Signal-Transistor(Cool MOS 小信號晶體管) |
| 中文描述： | 酷馬鞍山小信號晶體管（酷馬鞍山小信號晶體管） |
| 文件頁數： | 2/9頁 |
| 文件大小： | 78K |
| 代理商： | SPN01N60S5 |
1999-10-11
2
SPN01N60S5
Preliminary data
Electrical Characteristics
Parameter
at T
j
= 25 °C, unless otherwise specified
Thermal Characteristics
Thermal resistance, junction - soldering point
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
2)
Symbol
Values
typ.
Unit
min.
max.
R
thJS
R
thJA
-
-
-
35
110
-
-
-
K/W
K/W
72
Static Characteristics
Drain- source breakdown voltage
V
GS
= 0 V, I
D
= 0.25 mA
Gate threshold voltage, V
GS
= V
DS
I
D
= 1 mA, T
j
= 25 °C
Zero gate voltage drain current,
V
DS
=
V
DSS
V
GS
= 0 V,
T
j
= 25 °C
V
GS
= 0 V,
T
j
= 150 °C
Gate-source leakage current
V
GS
= 20 V,
V
DS
= 0 V
Drain-Source on-state resistance
V
GS
= 10 V,
I
D
= 0.2 A
V
(BR)DSS
600
-
-
V
V
GS(th)
2.3
3
3.7
I
DSS
-
-
0.5
-
1
50
μA
I
GSS
-
-
100
nA
R
DS(on)
-
5.5
6
1current limited by Tjmax
2
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70μm thick) copper area for drain
connection. PCB is vertical without blown air.
相關PDF資料 |
PDF描述 |
|---|---|
| SPN04N60S5 | Cool MOS Small-Signal-Transistor(Cool MOS 小信號晶體管) |
| SPN1012 | N-Channel Enhancement Mode MOSFET |
| SPN1012S52RG | N-Channel Enhancement Mode MOSFET |
| SPN1026 | Dual N-Channel Enhancement Mode MOSFET |
| SPN1026S56RG | Dual N-Channel Enhancement Mode MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| SPN020053 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| SPN020071 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| SPN020098TR | 制造商:RF Micro Devices Inc 功能描述: |
| SPN020126W | 制造商:RF Micro Devices Inc 功能描述: |
| SPN020137G TR | 制造商:Micrel 功能描述:Micrel SPN020137G TR |
發(fā)布緊急采購，3分鐘左右您將得到回復。