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參數(shù)資料
| 型號： | SPI-335-34 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | Ultraminiature photoreflector (single-transistor type) |
| 中文描述： | 袖珍photoreflector（單晶體管型） |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 40K |
| 代理商： | SPI-335-34 |
SPI-335-34
No.6029 1/6
Features
Infrared LED plus Phototransistor (single)
DIP type
Compact type : 3.4 (L)
2.7 (W)
1.5 (H) mm
Visible light cut type
Lead length : (L=3.5mm)
Absolute Maximum Ratings at Ta=25
°
C, 65%RH
Parameter
Forward Current
Reverse Voltage
Power Dissipation
Collector-Emitter Voltage
Emitter-Collector Voltage
Collector Curren
Power Dissipation
Operating Temperature
Storage Temperature
Soldering Temperature
*1
Symbol
I
F
V
R
P
D
V
CEO
V
ECO
I
C
P
C
Topr
Tstg
Tsol
Rating
50
5
70
20
5
20
70
--20 to +80
--40 to +100
260
Unit
mA
V
mW
V
V
mA
mW
°
C
°
C
°
C
Input LED
Output
Phototransistor
*1
Soldering conditions : time : max. 3sec; clearance : min. 1mm from lower case edge.
Electro-Optical Characteristics at Ta=25
°
C, 65%RH
Parameter
Forward Voltage
Reverse Current
Dark Current
Collector Output Current
Leakage Current
Collector Emitter
Saturation Voltage
Rise Time
Fall Time
*1
Location of reflector is show in Fig. 1.
*2
No reflector
*3
Table of Classification of Collector Output
Class
E
Ic (
μ
A)
180 to 110
Marking color
Orange
Symbol
V
F
I
R
I
CEO
I
C
I
LEAK
Condition
Min.
1.0
--
--
33
--
Typ.
1.2
--
10
--
--
Max.
1.6
10
200
180
1
Unit
V
μ
A
nA
μ
A
μ
A
Input
I
F
=10mA
V
R
=5V
I
F
=0mA, V
CE
=10V
I
F
=4mA, V
CE
=5V
*1
I
F
=10mA, V
CE
=5V
*2
Output
Coupled
V
CE
(sat)
I
F
=10mA, I
C
=50
μ
A
--
--
0.5
V
tr
tf
V
CC
=5V, R
L
=100
I
C
=1mA
--
--
5
5
--
--
μ
s
μ
s
F
G
H
140 to 80
Green
100 to 50
White
65 to 33
Silver
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
SPI-335-34
Infrared LED
Ultraminiature photoreflector
(single-transistor type)
72199 GI, (MI)
AL V.E. film
Glass plate (t : 1mm)
Fig. 1 Location of Reflector
Ordering number : EN6029
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