參數(shù)資料
型號: SPD22N08S2L-50
廠商: INFINEON TECHNOLOGIES AG
英文描述: OptiMOS Power-Transistor
中文描述: 的OptiMOS功率晶體管
文件頁數(shù): 1/8頁
文件大?。?/td> 266K
代理商: SPD22N08S2L-50
2003-05-09
Page 1
SPD22N08S2L-50
Opti
MOS
Power-Transistor
Product Summary
V
DS
R
DS(on)
I
D
75
V
m
A
50
25
Feature
N-Channel
Enhancement mode
Logic Level
175°C operating temperature
Avalanche rated
d
v
/d
t
rated
P- TO252 -3-11
Marking
2N08L50
Type
SPD22N08S2L-50
Package
P- TO252 -3-11 Q67060-S6062
Ordering Code
Maximum Ratings
, at
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Value
Unit
A
Continuous drain current
T
C
=22°C
I
D
25
18
Pulsed drain current
T
C
=25°C
Avalanche energy, single pulse
I
D puls
100
ID
=22A,
V
DD
=25V,
R
GS
=25
Repetitive avalanche energy, limited by
T
jmax
1)
Reverse diode d
v
/d
t
E
AS
94
mJ
E
AR
d
v
/d
t
7.5
IS
=22A,
V
DS
=60V,
d
i
/d
t
=200A/μs,
T
jmax
=175°C
Gate source voltage
Power dissipation
6
kV/μs
V
GS
P
tot
±20
75
V
W
T
C
=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
T
j ,
T
stg
-55... +175
55/175/56
°C
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