參數(shù)資料
型號: SPD04N60S5
廠商: SIEMENS AG
英文描述: Cool MOS Power Transistor(COOL MOS型功率晶體管)
中文描述: 酷MOS功率晶體管(酷馬鞍山型功率晶體管)
文件頁數(shù): 6/11頁
文件大?。?/td> 125K
代理商: SPD04N60S5
6
1999-10-07
SPU01N60S5
SPD01N60S5
Preliminary data
Typ. output characteristic
I
D
= f (V
DS
)
Parameter: V
GS
, T
j
= 25 °C
0
4
8
12
16
28
V
0.0
0.5
1.0
1.5
2.0
2.5
3.0
A
4.0
D
8V
20
V
DS
6V
7V
16V
12V
10V
Drain-source on-resistance
R
DS(on)
=
f
(
T
j
)
parameter :
I
D
= 0.5 A,
V
GS
= 10 V
-60
-20
20
60
100
°C
180
T
j
0
2
4
6
8
10
12
14
18
typ.
98%
D
Typ. transfer characteristics
I
D
= f( V
GS
)
V
DS
2 x I
D
x R
DS(on)max
0
4
8
12
16
V
GS
24
V
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
A
2.0
D
Typ. capacitances
C= f (V
DS
)
parameter: V
GS
=0 V, f=1 MHz
0
10
20
30
40
50
60
70
80
V
100
V
DS
0
10
1
10
2
10
3
10
pF
Ciss
Coss
Crss
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