參數資料
型號： SPD04N60S5
廠商： SIEMENS AG
英文描述： Cool MOS Power Transistor(COOL MOS型功率晶體管)
中文描述： 酷MOS功率晶體管（酷馬鞍山型功率晶體管）
文件頁數： 4/11頁
文件大小： 125K
代理商： SPD04N60S5
4
1999-10-07
SPU01N60S5
SPD01N60S5
Preliminary data
Electrical Characteristics
, at T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Values
typ.
Unit
min.
max.
Gate Charge Characteristics
Gate to source charge
V
DD
= 350 V,
I
D
= 0.8 A
Gate to drain charge
V
DD
= 350 V,
I
D
= 0.8 A
Total gate charge
V
DD
= 350 V,
I
D
= 0.8 A,
V
GS
= 0 to 10 V
Q
gs
-
0.95
-
nC
Q
gd
-
1.5
-
Q
g
-
2.9
-
Reverse Diode
Inverse diode continuous forward current
T
C
= 25 °C
Inverse diode direct current,pulsed
T
C
= 25 °C
Inverse diode forward voltage
V
GS
= 0 V,
I
F
= 0.8 A
Reverse recovery time
V
R
= 100 V,
I
F
=
I
S
,
di
F
/dt
= 100 A/μs
Reverse recovery charge
V
R
= 100 V,
I
F=
l
S
,
di
F
/dt
= 100 A/μs
I
S
-
-
0.8
A
I
SM
-
-
1.6
V
SD
-
1
1.2
V
t
rr
-
570
-
ns
Q
rr
-
0.75
-
μC
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SPD04N60S5BTMA1 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 600V 4.5A 3-Pin(2+Tab) TO-252 制造商:Infineon Technologies AG 功能描述:COOL MOS - Tape and Reel
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