參數(shù)資料
型號： SPD04N60S5
廠商： SIEMENS AG
英文描述： Cool MOS Power Transistor(COOL MOS型功率晶體管)
中文描述： 酷MOS功率晶體管（酷馬鞍山型功率晶體管）
文件頁數(shù)： 1/11頁
文件大小： 125K
代理商： SPD04N60S5
1
1999-10-07
SPU01N60S5
SPD01N60S5
Preliminary data
Cool MOS
Power-Transistor
New revolutionary high voltage technology
Ultra low gate charge
Periodic avalanche rated
Extreme dvdt rated
Optimized capacitances
Improved noise immunity
Former development designation:
SPUx7N60S5/SPDx7N60S5
G,1
D,2
S,3
C
O L
MOS
Type
SPU01N60S5
SPD01N60S5
V
DS
600 V 0.8 A
I
D
R
DS(on)
6
Package
P-TO251-3-1
P-TO252
Marking
01N60S5
01N60S5
Ordering Code
Q67040-S4193
Q67040-S4188
Maximum Ratings
, at T
j
= 25 °C, unless otherwise specified
Parameter
Continuous drain current
T
C
= 25 °C
T
C
= 100 °C
Pulsed drain current,
t
p
= 1ms
1)
T
C
= 25 °C
Avalanche energy, single pulse
I
D
= 0.8 A,
V
DD
= 50 V,
R
GS
= 25
Periodic avalanche energy
E
AR
only limited by
T
jmax
Reverse diode dvdt
I
S
= 0.8 A,
V
DS
<
V
DSS
,
didt
= 100 A/μs,
T
jmax
= 150 °C
Gate source voltage
Power dissipation
T
C
= 25 °C
Operating and storage temperature
Symbol
I
D
Value
0.8
0.5
Unit
A
I
D puls
1.6
E
AS
20
mJ
dvdt
6
kV/μs
V
GS
P
tot
±
20
11
V
W
T
j
,
T
stg
-55 ...+150
°C
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