參數(shù)資料
型號: SPD01N50M2
廠商: SIEMENS AG
英文描述: Cool MOS Power-Transistor(Cool MOS 功率晶體管)
中文描述: 酷MOS功率晶體管(酷馬鞍山功率晶體管)
文件頁數(shù): 3/7頁
文件大小: 88K
代理商: SPD01N50M2
3
1999-10-07
SPU01N50M2
SPD01N50M2
Target data sheet
Electrical Characteristics
, at T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Values
typ.
Unit
min.
max.
Dynamic Characteristics
Transconductance
V
DS
2*
I
D
*
R
DS(on)max
,
I
D
= 0.5 A
Input capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
Output capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
Reverse transfer capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
Turn-on delay time
V
DD
= 350 V,
V
GS
= 10 V,
I
D
= 0.8 A,
R
G
= 100
Rise time
V
DD
= 350 V,
V
GS
= 10 V,
I
D
= 0.8 A,
R
G
= 100
Turn-off delay time
V
DD
= 350 V,
V
GS
= 10 V,
I
D
= 0.8 A,
R
G
= 100
Fall time
V
DD
= 350 V,
V
GS
= 10 V,
I
D
= 0.8 A,
R
G
= 100
g
fs
-
tbd
-
S
C
iss
-
tbd
-
pF
C
oss
-
tbd
-
C
rss
-
tbd
-
t
d(on)
-
tbd
-
ns
t
r
-
tbd
-
t
d(off)
-
tbd
-
t
f
-
tbd
-
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