參數(shù)資料
型號： SPD01N50M2
廠商： SIEMENS AG
英文描述： Cool MOS Power-Transistor(Cool MOS 功率晶體管)
中文描述： 酷MOS功率晶體管（酷馬鞍山功率晶體管）
文件頁數(shù)： 2/7頁
文件大?。?/td> 88K
代理商： SPD01N50M2
2
1999-10-07
SPU01N50M2
SPD01N50M2
Target data sheet
Electrical Characteristics
, at T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Values
typ.
Unit
min.
max.
Thermal Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient
(Leaded and through-hole packages)
R
thJC
R
thJA
-
-
-
-
11
75
K/W
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
2)
R
thJA
-
-
-
-
75
50
Static Characteristics
, at
T
j
= 25 °C, unless otherwise specified
Drain- source breakdown voltage
V
GS
= 0 V,
I
D
= 0.25 mA
Gate threshold voltage,
V
GS
=
V
DS
I
D
= 250 μA,
T
j
= 25 °C
Zero gate voltage drain current,
V
DS
=
V
DSS
V
GS
= 0 V,
T
j
= 25 °C
V
GS
= 0 V,
T
j
= 150 °C
Gate-source leakage current
V
GS
= 20 V,
V
DS
= 0 V
Drain-Source on-state resistance
V
GS
= 10 V,
I
D
= 0.5 A
V
(BR)DSS
500
-
-
V
V
GS(th)
2.3
3
3.7
I
DSS
-
-
0.5
-
1
tbd
μA
I
GSS
-
-
100
nA
R
DS(on)
-
tbd
6
1current limited by Tjmax
2
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70μm thick) copper area for drain
connection. PCB is vertical without blown air.
相關(guān)PDF資料
PDF描述
SPU01N50M2 Cool MOS Power-Transistor(Cool MOS 功率晶體管)
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