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參數(shù)資料
| 型號： | SMBT3904U |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | NPN Silicon Switching Transistor Array |
| 中文描述： | NPN硅開關(guān)晶體管陣列 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 76K |
| 代理商： | SMBT3904U |
SMBT3904U
Nov-30-2001
3
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified.
Parameter
Values
typ.
Symbol
Unit
max.
min.
AC Characteristics
Transition frequency
I
C
= 10 mA,
V
CE
= 20 V,
f
= 100 MHz
Collector-base capacitance
V
CB
= 5 V,
f
= 1 MHz
Emitter-base capacitance
V
EB
= 0.5 V,
f
= 1 MHz
Short-circuit input impedance
I
C
= 1 mA,
V
CE
= 10 V,
f
= 1 kHz
Open-circuit reverse voltage transf.ratio
I
C
= 1 mA,
V
CE
= 10 V,
f
= 1 kHz
Short-circuit forward current transf.ratio
I
C
= 1 mA,
V
CE
= 10 V,
f
= 1 kHz
Open-circuit output admittance
I
C
= 1 mA,
V
CE
= 10 V,
f
= 1 kHz
Noise figure
I
C
= 100 μA,
V
CE
= 5 V,
R
S
= 1
k
,
f
= 1 kHz,
f
= 200
Hz
f
T
300
-
MHz
-
C
cb
-
-
pF
4
C
eb
-
-
8
h
11e
1
10
-
k
h
12e
0.5
8
10
-4
-
h
21e
100
-
-
400
h
22e
1
-
40
S
F
-
-
5
dB
Delay time
V
CC
= 3 V,
I
C
= 10 mA,
I
B1
= 1 mA,
V
BE(off)
= 0.5 V
Rise time
V
CC
= 3 V,
I
C
= 10 mA,
I
B1
= 1 mA,
V
BE(off)
= 0.5 V
Storage time
V
CC
= 3 V,
I
C
= 10 mA,
I
B1
=
I
B2
= 1mA
Fall time
V
CC
= 3 V,
I
C
= 10 mA,
I
B1
=
I
B2
=
1mA
t
d
-
-
35
ns
t
r
-
-
35
t
stg
-
-
200
t
f
-
-
50
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