參數(shù)資料
型號: SMBT3906U
廠商: INFINEON TECHNOLOGIES AG
英文描述: PNP Silicon Switching Transistor Array
中文描述: 進(jìn)步黨硅開關(guān)晶體管陣列
文件頁數(shù): 1/8頁
文件大?。?/td> 77K
代理商: SMBT3906U
SMBT3906U
Nov-30-2001
1
PNP Silicon Switching Transistor Array
High DC current gain: 0.1mA to 100mA
Low collector-emitter saturation voltage
Two ( galvanic) internal isolated Transistors
with good matching in one package
Complementary type: SMBT3904U (NPN)
VPW09197
1
2
3
4
5
6
EHA07175
6
5
4
3
2
1
C1
B2
E2
C2
B1
E1
TR1
TR2
Type
SMBT3906U
Marking
s2A
Pin Configuration
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74
Package
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Unit
V
Symbol
Value
40
40
5
200
330
150
-65 ... 150
V
CEO
V
CBO
V
EBO
I
C
P
tot
T
j
T
stg
mA
mW
°C
Total power dissipation
,
T
S
= 105 °C
Junction temperature
Storage temperature
Thermal Resistance
Junction - soldering point
1)
R
thJS
135
K/W
1For calculation of
R
thJA
please refer to Application Note Thermal Resistance
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