參數(shù)資料
型號(hào): SMBT3906S
廠商: SIEMENS A G
元件分類: 小信號(hào)晶體管
英文描述: PNP Silicon Switching Transistor Array
中文描述: 200 mA, 40 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
文件頁(yè)數(shù): 1/8頁(yè)
文件大?。?/td> 76K
代理商: SMBT3906S
SMBT3906S
Nov-30-2001
1
PNP Silicon Switching Transistor Array
High DC current gain: 0.1mA to 100mA
Low collector-emitter saturation voltage
Two ( galvanic) internal isolated Transistors
with good matching in one package
Complementary type: SMBT3904S (NPN)
VPS05604
6
3
1
5
4
2
EHA07175
6
5
4
3
2
1
C1
B2
E2
C2
B1
E1
TR1
TR2
Type
SMBT3906S
Marking
s2A
Pin Configuration
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
Package
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Total power dissipation
,
T
S
= 115 °C
Junction temperature
Storage temperature
Unit
V
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
tot
T
j
T
stg
Value
40
40
5
200
250
150
-65 ... 150
mA
mW
°C
Thermal Resistance
Junction - soldering point
1)
R
thJS
140
K/W
1For calculation of
R
thJA
please refer to Application Note Thermal Resistance
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