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參數(shù)資料
| 型號： | SMBT3904 |
| 廠商： | SIEMENS A G |
| 元件分類： | 小信號晶體管 |
| 英文描述： | NPN Silicon Switching Transistor |
| 中文描述： | 200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 文件頁數(shù)： | 2/7頁 |
| 文件大小： | 217K |
| 代理商： | SMBT3904 |
SMBT3904UPN
Aug-21-2002
2
Electrical Characteristics
at
T
A
=25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics per Transistor
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
Collector-base breakdown voltage
I
C
= 10 μA,
I
E
= 0
Emitter-base breakdown voltage
I
E
= 10 μA,
I
C
= 0
Collector cutoff current
V
CB
= 30 V,
I
E
= 0
DC current gain 1)
I
C
= 100 μA,
V
CE
= 1 V
I
C
= 1 mA,
V
CE
= 1 V
I
C
= 10 mA,
V
CE
= 1 V
I
C
= 50 mA,
V
CE
= 1 V
I
C
= 100 mA,
V
CE
= 1 V
V
(BR)CEO
40
-
-
V
V
(BR)CBO
40
-
-
V
(BR)EBO
5
-
-
I
CBO
-
-
50
nA
h
FE
40
70
100
60
30
-
-
-
-
-
-
-
300
-
-
-
Collector-emitter saturation voltage1)
I
C
= 10 mA,
I
B
= 1 mA
I
C
= 50 mA,
I
B
= 5 mA
Base-emitter saturation voltage 1)
I
C
= 10 mA,
I
B
= 1 mA
I
C
= 50 mA,
I
B
= 5 mA
V
CEsat
-
-
-
-
0.25
0.4
V
V
BEsat
0.65
-
-
-
0.85
0.95
1) Pulse test: t < 300 s; D < 2%
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| SMBT3906S | PNP Silicon Switching Transistor Array |
| SMBT3906S | PNP Silicon Switching Transistor Array |
| SMBT3906U | PNP Silicon Switching Transistor Array |
| SMBT3906 | PNP Silicon Switching Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SMBT3904 | 制造商:Infineon Technologies AG 功能描述:TRANSISTOR NPN SOT-23 |
| SMBT3904B5000 | 制造商:Infineon Technologies AG 功能描述:SP000223947_TRANSISTORS_TR_RO EOL301108 |
| SMBT3904B5000XT | 制造商:Infineon Technologies AG 功能描述:Trans GP BJT NPN 40V 0.2A 3-Pin SOT-23 T/R |
| SMBT3904B5003 | 制造商:Infineon Technologies AG 功能描述:SP000223860_AF XSTR_TR_RO EOL301108 |
| SMBT3904B5003XT | 制造商:Infineon Technologies AG 功能描述:Trans GP BJT NPN 40V 0.2A 3-Pin SOT-23 T/R |
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