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參數(shù)資料
| 型號(hào)： | SIPC265N10L |
| 廠商： | SIEMENS AG |
| 英文描述： | 100-V MOS transistors in S-FET technology( 采用S-FET 技術(shù)制作的 100-V MOS 型晶體管) |
| 中文描述： | 100 - V馬鞍山在S晶體管，場(chǎng)效應(yīng)晶體管技術(shù)（采用第S - FET的技術(shù)制作的100 - V馬鞍山型晶體管） |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大?。?/td> | 236K |
| 代理商： | SIPC265N10L |
APPLICATIONS
POWER SEMICONDUCTORS
31
Components
2/99
Target applications
MOSFETs with break-
down voltages of 100 V
are used principally in
the
telecommunica-
tions, industrial and au-
tomotive sectors. Their
applications include:
DC-DC converters for
- telecommunications,
- boost converters for supplying an
additional voltage (e.g. HID
lamps, common rail systems),
- industrial power supplies for au-
tomation technology in the range
from several watts (flyback con-
verters) up to several kW (for-
ward converters).
UPS applications in the lower
power range for PCs or smaller
medical equipment,
Valve drivers for common-rail sys-
tems in the latest motor vehicles,
Pulse rectifiers for
- battery-powered vehicles
- low-voltage motors in industry
(fork-lift trucks, servo motors,
smaller positioning drives),
- Three-phase asynchronous mo-
tors,
- DC motors with electronic com-
mutation.
Simulation models
Circuit layouts can be designed
much more efficiently with the aid
of simulation models which take in-
to account self-heating effects.
The “PSpice” and “Saber” models
can be downloaded from the follow-
ing Internet address:
http://www.infineon.com/products/
36/368.htm
Chips alone are available for all
products.
SUMMARY
The new 100-V transistors in
S-FET technology allow a
significantly lower drain-source
on resistance and considerably
higher nominal currents than
hitherto.The user can implement
more compact designs thanks to
their greatly reduced power
dissipation.
Check #2-99-4 (HL) on
Reader Service Card
http://www.infineon.com/
products/36/361.htm
Fig.4 Extreme ruggedness is a special performance feature of MOS transis-
tors.
Competitor comparison of avalanche energy
Fig.3 A switch in the TO-220 package can handle up to 70 A at 100V.This was
made possible thanks to improvements in its thermal properties and mount-
ing technology.
Competitor comparison of drain current
plications becomes much simpler
because protection circuits for dis-
turbances (load jumps, short cir-
cuits,line surge voltages etc.) can be
obviated or significantly under-di-
mensioned.
Fig.2 The SPP70N10L in the TO-220 package attains the lowest R
DS(on)
available on the market for 100V transistors.
Competitor comparison of forward resistance
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| SJD00074BED | Silicon PNP epitaxial planar type |
| SK1010 | 10 Amp Schottky Rectifier 20 to 100 Volts |
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| SK104 | 10 Amp Schottky Rectifier 20 to 100 Volts |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SIPC26N50C3 | 功能描述:MOSFET COOLM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SIPC26N50C3X1SA2 | 制造商:Infineon Technologies AG 功能描述:COOL MOS - Gel-pak, waffle pack, wafer, diced wafer on film |
| SIPC26N50C3XJSA1 | 制造商:Infineon Technologies AG 功能描述:COOL MOS 制造商:Infineon Technologies AG 功能描述:COOL MOS - Gel-pak, waffle pack, wafer, diced wafer on film |
| SIPC26N50C3XJSA2 | 制造商:Infineon Technologies AG 功能描述:COOL MOS 制造商:Infineon Technologies AG 功能描述:COOL MOS - Gel-pak, waffle pack, wafer, diced wafer on film |
| SIPC26N60C3 | 功能描述:MOSFET COOLM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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