參數(shù)資料
型號(hào)： SIPC265N10L
廠商： SIEMENS AG
英文描述： 100-V MOS transistors in S-FET technology( 采用S-FET 技術(shù)制作的 100-V MOS 型晶體管)
中文描述： 100 - V馬鞍山在S晶體管，場(chǎng)效應(yīng)晶體管技術(shù)（采用第S - FET的技術(shù)制作的100 - V馬鞍山型晶體管）
文件頁數(shù)： 1/2頁
文件大?。?/td> 236K
代理商： SIPC265N10L
30
APPLICATIONS
POWER SEMICONDUCTORS
Components
2/99
Thanks to versions in the SO-8,SOT-
223, DPAK and TO-220 packages,
this technology has now become
well established on a global scale.
This series was followed by
20V/30V products for low-voltage
applications. A transistor in a TO-
220 package allows a switch to be
implemented with a resistance of
less than 6 m
for switching cur-
rents up to 80 A.
Thanks to the continuous develop-
ment of the S-FET technology, tran-
sistors for 24V and 48V applications
are now available with a breakdown
voltage of 100 V (Fig. 1).
New 100-V transistors in
S-FET technology
The new 100-V transistors from In-
fineon Technologies allow forward
100-V MOS transistors in S-FET technology
MOSFETs for the next
millennium
The latest 100-V MOS transis-
tors from Infineon Technologies
are setting new standards for
low-resistance switches:thanks
to their S-FET technology,a 35%
lower R
DS(on)
and up to 30%
higher nominal currents can be
achieved than for competitor
products. The benefits for the
user are a reduced power dissi-
pation and hence the option of
implementing more compact
designs. In addition, the out-
standing ruggedness of these
transistors obviates the need for
protection circuits.
Siemens Semiconductors introduced
the S-FET technology for power
MOSFET transistors in 1996. The
55/60-V transistors which were the
first products of this development
have proved highly successful.
The authors:
HEINZ AMANN
is
responsible for
applications and
customer support
at the Sales and
Solutions Center
of Infineon
Technologies.
CHRISTIAN
SCHWEIZER
,Dipl.-
Ing.,is responsible
for the product
management of
low-voltage MOS
transistors.
losses to be significantly reduced
and higher currents to be switched
than before. They are also distin-
guished by their great ruggedness
with respect to avalanches and short
circuits. In addition forward resis-
tors can now be implemented in
more compact packages. Thus a
TO-247 package can be replaced by
a TO-220 version with smaller di-
mensions, giving the user greater
flexibility in design and reduced in-
sertion volumes.
The 16-m
switch in the TO-220
package sets new standards in terms
of R
DS(on)
,
drain current and
avalanche stability. This is clearly il-
lustrated by a comparison of the SPP
70N10L with competitor models
(Figs. 2 to 4).
Thanks to the ruggedness of these
transistors, the layout of many ap-
100-V S-FET complements the product range
Fig.1 Infineon Technologies is currently offering MOS transistors in S-FET
technology with breakdown voltages of 20 to 100 V in the SO-8,SOT-223,
DPAK/IPAK and TO-220/TO-263 packages.
55 V
8 m
BUZ 111S
7 m
BUZ 111SL
10 m
BUZ 110S
10 m
BUZ 110SL
15 m
BUZ 100S
12 m
BUZ 100SL
18 m
BUZ 102S
15 m
BUZ 102SL
36 m
BUZ 103S
26 m
BUZ 103SL
50 m
BUZ 101S
40 m
BUZ 101SL
80 m
BUZ 104S
64 m
BUZ 104SL
100 V
16 m
SPP 70N10L
26 m
SPP 47N10L
33 m
SPP 47N10
Packages
TO-220 / TO-263
DPAK/IPAK
SO-8
SOT-223
SPP 47N10L
SPP 47N10
SPP 47N10
SPP 47N10L
SIPC 26SN10L
SPP 70N10L
SPP 47N10L
SPP 47N10L
20 V
200 m
BSO 220N
30 V
17 m
BSO 302SN
50 m
BSO 305N
42 m
BSO 304SN
75 m
BSO 307N
75 m
BSP 308
15 m
SPD 30N03
18 m
SPD 30N03L
23 m
SPD 28N03
28 m
SPD 28N03
6 m
SPP 80N03
8 m
SPP 80N03L
15 m
SPP 46N03
18 m
SPP 46N03L
23 m
SPP 30N03
28 m
SPP 30N03L
55 V
36 m
SPD 31N05
26 m
SPD 28N05L
50 m
SPD 23N05
40 m
SPD 21N05L
80 m
SPD 14N05
64 m
SPD 13N05L
100 m
SPD 09N05
100 m
SPD 80N05L
60 V
120 m
BSO 615NV
150 m
BSO 615N
120 m
BSP 320S
150 m
BSP 318S
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SIPC26N50C3 功能描述:MOSFET COOLM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SIPC26N50C3X1SA2 制造商:Infineon Technologies AG 功能描述:COOL MOS - Gel-pak, waffle pack, wafer, diced wafer on film
SIPC26N50C3XJSA1 制造商:Infineon Technologies AG 功能描述:COOL MOS 制造商:Infineon Technologies AG 功能描述:COOL MOS - Gel-pak, waffle pack, wafer, diced wafer on film
SIPC26N50C3XJSA2 制造商:Infineon Technologies AG 功能描述:COOL MOS 制造商:Infineon Technologies AG 功能描述:COOL MOS - Gel-pak, waffle pack, wafer, diced wafer on film
SIPC26N60C3 功能描述:MOSFET COOLM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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