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參數(shù)資料
| 型號： | SJD00074BED |
| 廠商： | Panasonic Corporation |
| 英文描述： | Silicon PNP epitaxial planar type |
| 中文描述： | 硅外延平面型進步黨 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 79K |
| 代理商： | SJD00074BED |
Power Transistors
2SB1435
Silicon PNP epitaxial planar type
1
Publication date: March 2003
SJD00074BED
For low-frequency output amplification
■
Features
Low collector-emitter saturation voltage V
CE(sat)
Large collector current I
C
Allowing automatic insertion with radial taping
■
Absolute Maximum Ratings
T
a
=
25
°
C
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
50
50
5
2
3
V
Collector-emitter voltage (Base open)
V
CEO
V
Emitter-base voltage (Collector open)
V
EBO
I
C
V
Collector current
A
Peak collector current
I
CP
A
Collector power dissipation
P
C
T
j
1.5
W
Junction temperature
150
°
C
°
C
Storage temperature
T
stg
55 to
+
150
Rank
R
S
h
FE1
120 to 240
170 to 340
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
Unit: mm
1: Emitter
2: Collector
3: Base
MT-3-A1 Package
7.5
±
0.2
0.65
±
0.1
2
±
0
0.7
±
0.1
1.15
±
0.2
2.5
±
0.2
2.5
±
0.2
0.85
±
0.1
1.0
±
0.1
0.7
±
0.1
1.15
±
0.2
0.5
±
0.1
1
0.8 C
2
3
0.4
±
0.1
4.5
±
0.2
0.8 C
0.8 C
3
±
0
1
±
1
1
±
0
2
±
0
9
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emiter open)
V
CBO
I
C
=
10
μ
A, I
E
=
0
I
C
=
1 mA, I
B
=
0
I
E
=
10
μ
A, I
C
=
0
V
CB
=
20 V, I
E
=
0
V
CE
=
2 V, I
C
=
200 mA
V
CE
=
2 V, I
C
=
1 A
I
C
=
1 A, I
B
=
50 mA
I
C
=
1 A, I
B
=
50 mA
V
CB
=
10 V, I
E
=
50 mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
50
50
5
V
Collector-emitter voltage (Base open)
V
CEO
V
EBO
V
Emiter-base voltage (Collector open)
V
Collector-base cutoff current (Emitter open)
I
CBO
h
FE1
*
h
FE2
0.1
μ
A
Forward current transfer ratio
120
340
60
Collector-emitter saturation voltage
V
CE(sat)
0.2
0.85
0.3
1.20
V
Base-emitter saturation voltage
V
BE(sat)
f
T
C
ob
V
Transition frequency
80
MHz
Collector output capacitance
(Common base, input open circuited)
45
60
pF
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