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參數(shù)資料
| 型號(hào)： | SIGC41T120R3 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | IGBT3 Chip |
| 中文描述： | IGBT3芯片 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 90K |
| 代理商： | SIGC41T120R3 |
SIGC41T120R3
Edited by INFINEON Technologies AI PS DD HV3, L7651A, Edition 2, 04.09.2003
IGBT
3
Chip
FEATURES:
1200V Trench + Field Stop technology
low turn-off losses
short tail current
positive temperature coefficient
easy paralleling
Chip Type
This chip is used for:
power module
Applications:
drives
G
C
E
V
CE
I
Cn
Die Size
Package
Ordering Code
Q67050-
A4105-A001
SIGC41T120R3
1200V
35A
6.5 x 6.37 mm
2
sawn on foil
MECHANICAL PARAMETER:
Raster size
6.5 x 6.37
Emitter pad size
4.992 x 4.898
Gate pad size
1.139 x 1.139
mm
Area total / active
41.4 / 30.1
mm
2
Thickness
140
μm
Wafer size
150
mm
Flat position
180
grd
Max.possible chips per wafer
350 pcs
Passivation frontside
Photoimide
Emitter metallization
3200 nm AlSiCu
Collector metallization
1400 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
Die bond
electrically conductive glue or solder
Wire bond
Al, <500μm
Reject Ink Dot Size
0.65mm ; max 1.2mm
Recommended Storage Environment
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SIGC42T120CQ | IGBT Chip in Fieldstop -technology |
| SIGC42T120CS2 | IGBT Chip in NPT-technology |
| SIGC42T120CS | IGBT Chip in NPT-technology |
| SIGC42T120C | IGBT Chip in NPT-technology |
| SIGC42T60NC | IGBT Chip in NPT-technology |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SIGC41T120R3L | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:IGBT3 Chip |
| SIGC42T120C | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:IGBT Chip in NPT-technology |
| SIGC42T120CL | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:IGBT Chip in NPT-technology |
| SIGC42T120CQ | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:IGBT Chip in Fieldstop -technology |
| SIGC42T120CS | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:IGBT Chip in NPT-technology |
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