參數(shù)資料
型號: SIGC42T120CQ
廠商: INFINEON TECHNOLOGIES AG
英文描述: IGBT Chip in Fieldstop -technology
中文描述: 在場終止IGBT芯片技術
文件頁數(shù): 1/4頁
文件大?。?/td> 46K
代理商: SIGC42T120CQ
SIGC42T120CQ
Edited by INFINEON Technologies AIM PMD D CID CLS, L7151Q, Rev. 1.1, 20.12.2005
IGBT Chip in Fieldstop -technology
FEATURES:
1200V Fieldstop technology 120μm chip
low turn-off losses
short tail current
positive temperature coefficient
This chip is used for:
IGBT Modules
Applications:
welding, SMPS, resonant
applications
G
C
E
Chip Type
V
CE
I
Cn
Die Size
Package
Ordering Code
SIGC42T120CQ
1200V
25A
6.59 x 6.49 mm
2
sawn on foil SP0002-04966
MECHANICAL PARAMETER:
Raster size
6.59 x 6.49
Emitter pad size
2 x (2.18 x 1.58)
Gate pad size
1.06 x 0.65
Area total / active
42.8 / 33.5
mm
2
Thickness
120
μm
Wafer size
150
mm
Flat position
90
grd
Max.possible chips per wafer
332 pcs
Passivation frontside
Photoimide
Emitter metallization
3200 nm Al Si Cu
Collector metallization
1400 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
Die bond
electrically conductive glue or solder
Wire bond
Al, <500μm
Reject Ink Dot Size
0.65mm ; max 1.2mm
Recommended Storage Environment
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
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相關代理商/技術參數(shù)
參數(shù)描述
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