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參數(shù)資料
| 型號： | SIGC42T60NC |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | IGBT Chip in NPT-technology |
| 中文描述： | 在不擴散核武器條約IGBT芯片技術(shù) |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 78K |
| 代理商： | SIGC42T60NC |
SIGC42T60NC
Edited by INFINEON Technologies AI PS DD HV3, L 7272-M, Edition 2, 28.11.2003
IGBT Chip in NPT-technology
FEATURES:
600V NPT technology
100μm chip
positive temperature coefficient
easy paralleling
This chip is used for:
IGBT-Modules
Applications:
drives
G
C
E
Chip Type
V
CE
I
Cn
Die Size
Package
Ordering Code
Q67041-A4692-
A001
SIGC42T60NC
600V
50A
6.5 x 6.5 mm
2
sawn on foil
MECHANICAL PARAMETER:
Raster size
6.5 x 6.5
Area total / active
42.25 / 35.6
Emitter pad size
2x( 3.0x2.85 )
Gate pad size
0.8 x 1.5
mm
2
Thickness
100
μm
Wafer size
150
mm
Flat position
90
deg
Max.possible chips per wafer
334
Passivation frontside
Photoimide
Emitter metallization
3200 nm Al Si 1%
Collector metallization
1400 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
Die bond
electrically conductive glue or solder
Wire bond
Al,
≤
500μm
Reject Ink Dot Size
0.65mm ; max 1.2mm
Recommended Storage Environment
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
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