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參數(shù)資料
| 型號： | Si8900EDB |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | ESD-protected bidirectional N-Ch. MOSFET for battery protection circuits |
| 中文描述： | ESD保護雙向P溝道MOSFET，用于電池保護電路 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 56K |
| 代理商： | SI8900EDB |
Si8900EDB
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 71830
S-21474
—
Rev. D, 26-Aug-02
SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
SS
= V
GS
, I
D
= 1.1 mA
0.45
1.0
V
V
SS
= 0 V, V
GS
=
4.5 V
4
A
Gate-Body Leakage
I
GSS
V
SS
= 0 V, V
GS
=
12 V
10
mA
V
SS
= 16 V, V
GS
= 0 V
1
Zero Gate Voltage Source Current
I
S1S2
V
SS
= 16 V, V
GS
= 0 V, T
J
= 85 C
5
A
On-State Source Current
a
I
S(on)
V
SS
= 5 V, V
GS
= 4.5 V
5
A
V
GS
= 4.5 V, I
SS
= 1 A
0.020
0.024
V
GS
= 3.7 V, I
SS
= 1 A
0.022
0.026
Source1
—
Source2 On-State Resistance
a
r
S1S2(on)
V
GS
= 2.5 V, I
SS
= 1 A
0.026
0.034
V
GS
= 1.8 V, I
SS
= 1
A
0.032
0.040
Forward Transconductance
a
g
fs
V
SS
= 10 V, I
SS
= 1 A
31
S
Dynamic
b
Turn-On Delay Time
t
d(on)
3
5
Rise Time
t
r
V
= 10 V, R
= 10
1 A, V
GEN
= 4.5 V, R
G
= 6
4.5
7
Turn-Off Delay Time
t
d(off)
I
SS
55
85
s
Fall Time
t
f
15
25
Notes
a.
b.
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
300 s, duty cycle
2%.
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
0.01
100
10,000
Gate Current vs. Gate-Source Voltage
0
4
8
12
16
20
0
3
6
9
12
15
Gate-Current vs. Gate-Source Voltage
V
GS
- Gate-to-Source Voltage (V)
0.1
1
10
1,000
V
GS
- Gate-to-Source Voltage (V)
-
I
G
A
0
3
6
9
15
T
J
= 25 C
T
J
= 150 C
-
I
G
I
GSS
@ 25 C (mA)
12
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| SI8900EDB-T1 | 制造商:Vishay Siliconix 功能描述:TRANS MOSFET N-CH 20V 5.4A 10PIN MICRO FOOT - Tape and Reel |
| SI8900EDB-T2-E1 | 功能描述:MOSFET 20V 7.0A 1.8W Bi-Directional RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| Si8901B-A01-GS | 功能描述:隔離器接口集成電路 2.5kV iso monitoring ADC with I2C bus RoHS:否 制造商:Texas Instruments 通道數(shù)量:2 傳播延遲時間: 電源電壓-最大:5.5 V 電源電壓-最小:3 V 電源電流:3.6 mA 功率耗散: 最大工作溫度:+ 125 C 安裝風格: 封裝 / 箱體:SOIC-8 封裝:Tube |
| SI8901B-A01-GSR | 制造商:Silicon Laboratories Inc 功能描述:2.5 KV ISOLATED MONITORING ADC WITH I2C BUS - Tape and Reel 制造商:Silicon Laboratories Inc 功能描述:IC ADC ISO MONITORING 2.5KV I2C 制造商:Silicon Laboratories Inc 功能描述:IC ADC 10BIT I2C/SRL SOIC 制造商:Silicon Laboratories Inc 功能描述:2.5 kV Monitoring ADC with UART bus |
| Si8901D-A01-GS | 功能描述:隔離器接口集成電路 2.5kV iso monitoring ADC with I2C bus RoHS:否 制造商:Texas Instruments 通道數(shù)量:2 傳播延遲時間: 電源電壓-最大:5.5 V 電源電壓-最小:3 V 電源電流:3.6 mA 功率耗散: 最大工作溫度:+ 125 C 安裝風格: 封裝 / 箱體:SOIC-8 封裝:Tube |
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