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參數(shù)資料
| 型號(hào)： | SI6882EDQ-T1 |
| 廠商： | VISHAY SILICONIX |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 6000 mA, 24 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | TSSOP-8 |
| 文件頁數(shù)： | 4/5頁 |
| 文件大?。?/td> | 97K |
| 代理商： | SI6882EDQ-T1 |
www.vishay.com
4
Document Number: 71984
S-60422-Rev. B, 20-Mar-06
Vishay Siliconix
Si6882EDQ
New Product
TYPICAL CHARACTERISTICS 25 °C unless noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?71984.
Single Pulse Power
Time (sec)
Power
(W)
0.01
0
0.1
80
100
20
40
110
30
60
Safe Operating Area, Junction-to-Case
1000
10
0.1
1
10
100
0.1
100
0.1 s
-Drain
Current
(A)
I
D
1
Limited by rDS(on)
TC = 25 °C
Single Pulse
1 s
10 s
dc
0.01 s
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which rDS(on) is specified
Normalized Thermal Transient Impedance, Junction-to-Ambient
10-3
10-2
1
10
600
10-1
10-4
100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (sec)
Normalized
Ef
fective
T
ransient
Thermal
Impedance
1. Duty Cycle, D =
2. Per Unit Base = RthJA = 85 °C/W
3. TJM - TA = PDMZthJA(t)
t1
t2
t1
t2
Notes:
4. Surface Mounted
PDM
Normalized Thermal Transient Impedance, Junction-to-Foot
10-3
10-2
110
10-1
10-4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (sec)
Normalized
Ef
fective
T
ransient
Thermal
Impedance
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