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參數(shù)資料
| 型號： | SI6882EDQ-T1 |
| 廠商： | VISHAY SILICONIX |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 6000 mA, 24 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | TSSOP-8 |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 97K |
| 代理商： | SI6882EDQ-T1 |
Document Number: 71984
S-60422-Rev. B, 20-Mar-06
www.vishay.com
3
Vishay Siliconix
Si6882EDQ
New Product
TYPICAL CHARACTERISTICS 25 °C unless noted
On-Resistance vs. Drain Current
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
-On-Resistance
(
Ω
)
r DS(on)
ID - Drain Current (A)
0.00
0.01
0.02
0.03
0.04
0
6
12
18
24
30
VGS = 2.5 V
VGS = 4.5 V
VGS = 1.8 V
TJ - Junction Temperature (°C)
(Normalized)
-On-Resistance
r DS(on)
0.6
0.8
1.0
1.2
1.4
1.6
- 50
0
50
100
150
VGS = 4.5 V
ID = 7.5 A
0.000
0.012
0.024
0.036
0.048
0.060
02468
-On-Resistance
(
Ω
)
r DS(on)
VGS - Gate-to-Source Voltage (V)
ID = 7.5 A
Gate Charge
Source-Drain Diode Forward Voltage
Threshold Voltage
-Gate-to-Source
Voltage
(V)
Qg - Total Gate Charge (nC)
V
GS
0
1
2
3
4
5
0
6
12
18
24
30
VDS = 10 V
ID = 7.5 A
VSD - Source-to-Drain Voltage (V)
-Source
Current
(A)
I
S
TJ = 150 °C
0
0.4
10
0.8
1.2
1
30
0.2
0.6
1.0
TJ = 25 °C
- 0.6
- 0.4
- 0.2
0.0
0.2
0.4
- 50
- 25
0
25
50
75
100
125
150
TJ - Temperature (°C)
ID = 250 A
V
ariance
(V)
V
GS(th)
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