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| 型號(hào)： | SI6882EDQ-T1 |
| 廠商： | VISHAY SILICONIX |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 6000 mA, 24 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | TSSOP-8 |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 97K |
| 代理商： | SI6882EDQ-T1 |
www.vishay.com
2
Document Number: 71984
S-60422-Rev. B, 20-Mar-06
Vishay Siliconix
Si6882EDQ
New Product
Notes:
a. Pulse test; pulse width
≤ 300 s, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS
25 °C unless noted
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 A
0.45
0.85
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 4.5 V
± 250
nA
VDS = 0 V, VGS = ± 12 V
± 10
mA
Zero Gate Voltage Drain Current
IDSS
VDS = 24 V, VGS = 0 V
1
A
VDS = 24 V, VGS = 0 V, TJ = 70 °C
25
On-State Drain Currenta
ID(on)
VDS ≥ 5 V, VGS = 4.5 V
20
A
Drain-Source On-State Resistancea
rDS(on)
VGS = 4.5 V, ID = 7.5 A
0.015
0.019
Ω
VGS = 3.7 V, ID = 6.9 A
0.017
0.021
VGS = 2.5 V, ID = 6.5 A
0.017
0.023
VGS = 1.8 V, ID = 6.0 A
0.020
0.027
Forward Transconductancea
gfs
VDS = 10 V, ID = 7.5 A
39
S
Diode Forward Voltagea
VSD
IS = 1.6 A, VGS = 0 V
0.65
1.1
V
Dynamicb
Total Gate Charge
Qg
VDS = 10 V, VGS = 4.5 V, ID = 7.5 A
27
40
nC
Gate-Source Charge
Qgs
3.0
Gate-Drain Charge
Qgd
5.5
Turn-On Delay Time
td(on)
VDD = 10 V, RL = 10 Ω
ID 1 A, VGEN = 4.5 V, RG = 6 Ω
1.5
2.3
s
Rise Time
tr
800
1200
Turn-Off Delay Time
td(off)
610
Fall Time
tf
5.5
10
Output Characteristics
0
6
12
18
24
30
0
1234
5
VDS - Drain-to-Source Voltage (V)
-Drain
Current
(A)
I
D
VGS = 5 thru 2 V
1.5 V
Transfer Characteristics
0
6
12
18
24
30
0.0
0.5
1.0
1.5
2.0
VGS - Gate-to-Source Voltage (V)
-Drain
Current
(A)
I
D
- 55 °C
TC = 125 °C
25 °C
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