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參數(shù)資料
| 型號： | SI6821DQ |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | P-Channel, Reduced Qg, MOSFET with Schottky Diode |
| 中文描述： | P溝道，減少Q(mào)g和與MOSFET的肖特基二極管 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 62K |
| 代理商： | SI6821DQ |
Si6821DQ
Vishay Siliconix
New Product
www.vishay.com FaxBack 408-970-5600
2-2
Document Number: 70791
S-56954—Rev. C, 01-Mar-99
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= –250 A
–0.6
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
12 V
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= –20 V, V
GS
= 0 V
–1
A
V
DS
= –20 V, V
GS
= 0 V, T
J
= 55 C
–25
On-State Drain Current
a
I
D(on)
V
DS
–5 V, V
GS
= –4.5 V
–6
A
Drain Source On State Resistance
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= –4.5 V, I
D
= –1.7 A
0.135
0.190
V
GS
= –3.0 V, I
D
=
–1.3 A
0.200
0.280
Forward Transconductance
a
g
fs
V
DS
= –10 V, I
D
= –1.7 A
4.0
S
Diode Forward Voltage
a
V
SD
I
S
= –1 A, V
GS
= 0 V
–0.77
–1.2
V
Dynamic
b
Total Gate Charge
Q
g
V
DS
= –3 5 V V
V
GS
= –4.5 V, I
D
= –0.3 A
4 5 V I
0 3 A
3.5
7.0
Gate-Source Charge
Q
gs
0.85
nC
Gate-Drain Charge
Q
gd
0.60
Turn-On Delay Time
t
d(on)
V
= –3 5 ,
= 11 5
–1 A, V
GEN
= –4.5 V, R
G
= 6
7
15
Rise Time
t
r
I
D
4 5 V R
10
20
Turn-Off Delay Time
t
d(off)
11
20
ns
Fall Time
t
f
7
15
Source-Drain Reverse Recovery Time
t
rr
I
F
= –1 A, di/dt = 100 A/ s
35
60
Notes
a.
b.
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
300 s, duty cycle
2%.
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Forward Voltage Drop
V
F
I
F
= 1 A
0.45
0.5
V
I
F
= 1 A, T
J
= 125 C
0.36
0.42
M
i
R
L
k
C
I
rm
V
r
= 20 V
0.003
0.100
A
V
r
= 20 V, T
J
= 75 C
0.1
1
mA
V
r
= 20 V, T
J
= 125 C
2
10
Junction Capacitance
C
T
V
r
= 10 V
62
pF
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